Related papers: Etching process of narrow wire and application to …
We describe a method for fabrication of uniform aluminum nanowires with diameters below 15 nm. Electron beam lithography is used to define narrow wires, which are then etched using a sodium bicarbonate solution, while their resistance is…
We describe here the realization of a single electron source similar to single photon sources in optics. On-demand single electron injection is obtained using a quantum dot connected to the conductor via a tunnel barrier of variable…
Large scale graphene electronics desires lithographic patterning of narrow graphene nanoribbons (GNRs) for device integration. However, conventional lithography can only reliably pattern ~20nm wide GNR arrays limited by lithography…
We show that current in a two-dimensional electron gas (2DEG) can trap ultracold atoms $<1 \mu$m away with orders of magnitude less spatial noise than a metal trapping wire. This enables the creation of hybrid systems, which integrate…
Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG…
Single-photon sources are essential building blocks in quantum photonic networks, where quantum-mechanical properties of photons are utilised to achieve quantum technologies such as quantum cryptography and quantum computing. Most…
We find that, under appropriate conditions, electrons can pass a barrier etched across a two dimensional electron gas (2DEG) by field emission from the GaAs/AlGaAs heterojunction into a second, low-density 2DEG formed deep in the substrate.…
A method to fabricate GaAs microcavities using only a soft mask with an electrolithographic pattern in an inductively coupled plasma etching is presented. A careful characterization of the fabrication process pinpointing the main routes for…
The study of electron transport in low-dimensional systems is of importance, not only from a fundamental point of view, but also for future electronic and spintronic devices. In this context heterostructures containing a two-dimensional…
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods…
Plasmonic antennas are attractive optical structures for many applications in nano and quantum technologies. By providing enhanced interaction between a nanoemitter and light, they efficiently accelerate and direct spontaneous emission. One…
Nanofabrication research pursues the miniaturization of patterned feature size. In the current state of the art, micron scale areas can be patterned with features down to ~ 30 nm pitch using electron beam lithography. Our work demonstrates…
We present a technique to fabricate ultrathin (down to 20 nm) uniform electron transparent windows at dedicated locations in a SiN membrane for in situ transmission electron microscopy experiments. An electron-beam (e-beam) resist is…
The two-dimensional electron gas (2DEG) at oxides interfaces and surfaces has attracted large attention in physics and research due to its unique electronic properties and possible application in optoelectronics and nanoelectronics. The…
High quality electron beams, with high spatial and tempo- ral resolution, have an important use in electron diffraction experiments to probe and study the constituents of matter. A cold electron source is being developed based on elec- tron…
Recent developments in fabrication of van der Waals heterostructures enable new type of devices assembled by stacking atomically thin layers of two-dimensional materials. Using this approach, we fabricate light-emitting devices based on a…
Artificial atomic systems in solids such as single photon emitters are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Here, we report on a controllable way to…
Fabrication of porous GaN distributed Bragg reflectors (DBRs) via the selective electrochemical etching (ECE) of conductive Si-doped layers, separated by non-intentionally doped (NID) layers, provides a straightforward methodology for…
Single photon emitters (SPEs) are building blocks of quantum technologies. Defect engineering of 2D materials is ideal to fabricate SPEs, wherein spatially deterministic and quality-preserving fabrication methods are critical for…
Confinement of the electron gas along one of the spatial directions opens an avenue for studying fundamentals of quantum transport along the side of numerous practical electronic applications, with high-electron-mobility transistors being a…