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Tungsten oxide and its associated bronzes (compounds of tungsten oxide and an alkali metal) are well known for their interesting optical and electrical characteristics. We have modified the transport properties of thin WO$_3$ films by…

Superconductivity · Physics 2017-07-19 X. Leng , J. Pereiro , J. Strle , G. Dubuis , A. T. Bollinger , A. Gozar , J. Wu , N. Litombe , C. Panagopoulos , D. Pavuna , I. Božović

By means of first principles schemes based on magnetically constrained density functional theory and on the band unfolding technique we study the effect of doping on the conducting behaviour of the Lifshitz magnetic insulator NaOsO3.…

Strongly Correlated Electrons · Physics 2019-05-01 Sabine Dobrovits , Bongjae Kim , Michele Reticcioli , Alessandro Toschi , Sergii Khmelevskyi , Cesare Franchini

Metal-insulator transitions (MITs) in correlated oxides offer immense potential for next-generation Mottronic devices. However, their integration into practical applications is often hindered by the coupling of MITs with symmetry-lowering…

Turning a pristine Mott insulator into a correlated metal by chemical doping is a common procedure in strongly correlated materials physics, e.g. underlying the phenomenology of high-$T_c$ cuprates. The ruthenate bilayer compound…

Strongly Correlated Electrons · Physics 2020-09-29 Frank Lechermann , Qiang Han , Andrew J. Millis

Controlling the charge carrier density provides an efficient way to trigger phase transitions and modulate the optoelectronic properties in natural materials. This approach could be used to induce topological transitions in the optical…

Electrostatic carrier doping using a field-effect-transistor structure is an intriguing approach to explore electronic phases by critical control of carrier concentration. We demonstrate the reversible control of the insulator-metal…

Materials Science · Physics 2015-05-13 H. Nakamura , H. Tomita , H. Akimoto , R. Matsumura , I. H. Inoue , T. Hasegawa , K. Kono , Y. Tokura , H. Takagi

Modulation of the charge carrier density in a Mott material by remote doping from a highly doped conventional band insulator is proposed to test theoretical predictions of band filling control of the Mott metal-insulator transition without…

Materials Science · Physics 2011-11-11 Junwoo Son , Bharat Jalan , Adam P. Kajdos , Leon Balents , S. James Allen , Susanne Stemmer

Charge doping is an effective way to induce metal-insulate transition (MIT) in correlated materials for many important utilizations, which is however practically limited by problem of low stability. In this study, we have achieved…

V2O3 is the prototype system for the Mott transition, one of the most fundamental phenomena of electronic correlation. Temperature, doping or pressure induce a metal to insulator transition (MIT) between a paramagnetic metal (PM) and a…

The Mott transistor is a paradigm for a new class of electronic devices---often referred to by the term Mottronics---, which are based on charge correlations between the electrons. Since correlation-induced insulating phases of most oxide…

Insulator to metal (IMT) transition (T$_t$ $\sim$ 341 K) in the VO2 accompanies transition from an infrared (IR) transparent to IR opaque phase. Tailoring of the IMT and associated IR switching behavior can offer potential thermochromic…

Materials Science · Physics 2020-01-22 S. S. Majid , S. R. Sahu , A. Ahad , K. Dey , K. Gautam , F. Rahman , P. Behera , U. Deshpande , V. G. Sathe , D. K. Shukla

We describe a reversible, spatially-controlled doping method for cuprate films. The technique has been used to create superconductor-antiferromagnetic insulator-superconductor (S-AFI-S) junctions and optimally doped…

Superconductivity · Physics 2007-05-23 Seongshik Oh , Joseph A. Bonetti , Kevin Inderhees , D. J. Van Harlingen , J. N. Eckstein

Tuning the spin-orbit coupling strength via foreign element doping and/or modifying bonding strength via strain engineering are the major routes to convert normal insulators to topological insulators. We here propose an alternative strategy…

Materials Science · Physics 2015-11-19 Wu-Jun Shi , Junwei Liu , Yong Xu , Shi-Jie Xiong , Jian Wu , Wenhui Duan

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum…

Strongly Correlated Electrons · Physics 2014-04-10 Daniel G. Ouellette , Pouya Moetakef , Tyler A. Cain , Jack Y. Zhang , Susanne Stemmer , David Emin , S. James Allen

The doping induced insulator-metal transition in $La_{1-x}Sr_{x}TiO_{3}$ is studied using the ab-initio LDA+DMFT method. Combining the LDA bandstructure for the actual, distorted structure found recently with multi-orbital DMFT to treat…

Strongly Correlated Electrons · Physics 2016-08-31 L. Craco , M. S. Laad , S. Leoni , E. Müller-Hartmann

Tungsten trioxide is a versatile material with widespread applications ranging from electrochromic and optoelectronic devices to water splitting and catalysis of chemical reactions. For technological applications, thin films of WO3 are…

Materials Science · Physics 2018-05-22 Giordano Mattoni , Alessio Filippetti , Nicola Manca , Pavlo Zubko , Andrea D. Caviglia

Metal-insulator transitions (MIT),an intriguing correlated phenomenon induced by the subtle competition of the electrons' repulsive Coulomb interaction and kinetic energy, is of great potential use for electronic applications due to the…

Materials Science · Physics 2021-10-13 Kun Han , Hanyu Wang , Liang Wu , Yu Cao , Dong-Chen Qi , Changjian Li , Zhen Huang , Xiao Li , X. Renshaw Wang

BaTiO3 is typically a strong n-type material with tuneable optoelectronic properties via doping and controlling the synthesis conditions. It has a wide band gap that can only harness the ultraviolet region of the solar spectrum. Despite…

Correlated electron materials (CEMs) host a rich variety of condensed matter phases. Vanadium dioxide (VO2) is a prototypical CEM with a temperature-dependent metal-to-insulator (MIT) transition with a concomitant crystal symmetry change.…

We present a theory describing the mechanism for the two-dimensional (2D) metal-insulator transition (MIT) in absence of disorder. A two-band Hubbard model is introduced, describing vacancy-interstitial pair excitations within the Wigner…

Strongly Correlated Electrons · Physics 2008-02-15 S. Pankov , V. Dobrosavljevic
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