Related papers: Characterisation of negative-U defects in semicond…
These informal lecture notes describe the progress in semiconductor spintronics in a historic perspective as well as in a comparison to achievements of spintronics of ferromagnetic metals. After outlining motivations behind spintronic…
We develop a theory of nonreciprocal current-voltage (I-U) characteristics in noncentrosymmetric superconductor-normal metal-superconductor junctions. We show that at small voltages the nonreciprocal features of the I-U characteristics can…
Atomistic theory holds the promise for the ab initio development of superalloys based on the fundamental principles of quantum mechanics. The last years showed a rapid progress in the field. Results from atomistic modeling enter…
In recent years, there were a number of experimental developments and discoveries of novel superconducting materials which exhibit multicomponent, many-body degrees of freedom. These superconductors, that are described by several…
We predict a novel quantum interference based on the negative refraction across a semiconductor P-N junction: with a local pump on one side of the junction, the response of a local probe on the other side behaves as if the disturbance…
Solid-state defect quantum systems are exquisite probes of their local charge environment. Nonlinear dynamical electric fields in solids are challenging to characterize directly, conventionally limited to coarse macroscopic methods which…
Semiclassical methods are extremely valuable in the study of transport and thermodynamical properties of ballistic microstructures. By expressing the conductance in terms of classical trajectories, we demonstrate that quantum interference…
We provide some lower semicontinuity results in the space of special functions of bounded deformation for energies of the type $$ %\int_\O {1/2}({\mathbb C} \E u, \E u)dx + \int_{J_{u}} \Theta(u^+, u^-, \nu_{u})d \H^{N-1} \enspace, \enspace…
Making use of the energetics and equations of state of defective uranium dioxide that calculated with first-principles method, we demonstrate a possibility of constraining the formation energy of point defects by measuring the transition…
Charge traps in the semiconductor bulk (bulk charge traps) make it difficult to predict the electric field within wide-bandgap semiconductors. The issue is the daunting number of bulk charge-trap candidates which means the treatment of bulk…
The bias dependent interface charge is considered as the origin of the observed non-ideality in current-voltage and capacitance-voltage characteristics. Using the simplified model for the interface electronic structure based on defects…
Nanoscopic heterogeneities in composition and structure are quintessential for the properties of electrocatalyst materials. Here, we present a semiclassical model to study the electrochemical properties of supported electrocatalyst…
Quantitative description of charge transport across tunneling and break-junction devices with novel superconductors encounters some problems not present, or not as severe for traditional superconducting materials. In this work, we explain…
This review covers the study of some basic properties of the phase diagram of quasi-one-dimensional organic superconductors from both experimental and theoretical viewpoints.
We study the electron-phonon relaxation (dephasing) rate in disordered semiconductors and low-dimensional structures. The relaxation is determined by the interference of electron scattering via the deformation potential and elastic electron…
Diluted ferromagnetic III-V semiconductors typically show a high degree of compensation. Compensation is connected to the presence of comparable densities of charged defects of either sign. This naturally leads to the development of strong…
Properties of quantum dot based spin qubits have significant inter-device variability due to unavoidable presence of various types of disorder in semiconductor nanostructures. A significant source of this variability is charge disorder at…
Positive $C_0$-semigroups that occur in concrete applications are, more often than not, irreducible. Therefore a deep and extensive theory of irreducibility has been developed that includes characterizations, perturbation analysis, and…
Electron-phonon interaction is of central importance for the electrical and heat transport properties of metals, and is directly responsible for charge-density-waves or (conventional) superconducting instabilities. The direct observation of…
A practical quantitative model is presented to account for the I-V characteristics of pin diodes based on epitaxial Ge-like materials. The model can be used to quantify how the different material properties and recombination mechanisms…