Related papers: Magnetization reversal driven by spin-transfer-tor…
Thermally-assisted ultra-fast magnetization reversal in a DC magnetic field for magnetic multilayer thin films with perpendicular anisotropy has been investigated in the time domain using femtosecond laser heating. The experiment is set-up…
In ferromagnetic thin films, the presence of an out-of-plane component of the magnetic anisotropy may induce a transition from planar to stripe-like magnetic domains above a critical thickness, $t_c$. Because of the changes in the domain…
In this work the magnetization dynamics of clusters supported on non-magnetic substrates is shown to exhibit an unprecedented complex response when subjected to external magnetic fields. The field-driven magnetization reversal of small Co…
We report on magnetization precession induced in (Ga,Mn)As by an optical spin transfer torque (OSTT). This phenomenon, which corresponds to a transfer of angular momentum from optically-injected spin-polarized electrons to magnetization,…
Controlling magnetic properties through the application of an electric field is a significant challenge in modern nanomagnetism. In this study, we investigate the magneto-ionic control of magnetic anisotropy in the topmost Co layer in…
The magnetization reversal process in thin-film ferromagnetic elements with surface anisotropy of various shapes and sizes is investigated by means of numerical simulation. The dependence of the perpendicular and in-plane hysteresis loops…
We study the precessional switching of the magnetization in microscopic spin valve cells induced by ultra short in-plane hard axis magnetic field pulses. Stable and highly efficient switching is monitored following pulses as short as 140 ps…
Spin-transfer magnetic random access memory is of significant interest for cryogenic applications where a persistent, fast, low-energy consumption and high device density is needed. Here we report the low-temperature nanosecond duration…
Low barrier nanomagnets have attracted a lot of research interest for their use as sources of high quality true random number generation. More recently, low barrier nanomagnets with tunable output have been shown to be a natural hardware…
Using the spin-spiral formulation of the tight-binding linear muffin-tin orbital method, the principal components of the exchange stiffness tensor are calculated for typical hard magnets including tetragonal CoPt-type and hexagonal YCo5…
We theoretically show how the spin orientation of a single magnetic adatom can be controlled by spin polarized electrons in a scanning tunneling microscope configuration. The underlying physical mechanism is spin assisted inelastic…
The spin transfer torque (STT) can lead to steady precession of magnetization without any external applied field in magnetic spin valve where the magnetic layer have very different spin diffusion length. This effect is associated with an…
We study the combined effects of spin transfer torque, voltage modulation of interlayer exchange coupling and magnetic anisotropy on the switching behavior of perpendicular magnetic tunnel junctions (p-MTJs). In asymmetric p-MTJs, a…
Inplane magnetization reversal of a permalloy/platinum bilayer was detected using the spin rectification effect. Using a sub GHz microwave frequency to excite spin torque ferromagnetic resonance (ST FMR) in the bilayer induces two discrete…
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-controlled magnetic anisotropy linearly lowers the energy barrier…
Spin-orbitronics, based on both spin and orbital angular momentum, presents a promising pathway for energy-efficient memory and logic devices. Recent studies have demonstrated the emergence of orbital currents in light transition metals…
Memory devices operating due to the fast proton transfer (PT) process are proposed by means of the first-principles calculations. Writing an information is performed using the electrostatic potential of the scanning tunneling microscopy…
Microwave assisted magnetization reversal has been investigated in a bilayer system of Pt/ferromagnet by detecting a change in the polarity of the spin pumping signal. The reversal process is studied in two material systems, Pt/CoFeB and…
Spin-orbit torque (SOT) based magnetic random access memory (MRAM) is envisioned as an emerging non-volatile memory due to its ultra-high speed and low power consumption. The field-free switching schema in SOT devices is of great interest…
Spin transfer torque (STT) driven by a charge current plays a key role in magnetization switching in heavy-metal/ferromagnetic-metal structures. The STT efficiency defined by the ratio between the effective field due to STT and the current…