Related papers: \b{eta}-phase (AlxGa1-x)2O3 thin film with Al comp…
FeGa3 is a well known d-p hybridization induced intermetallic bandgap semiconductor. In this work, we present the experimental and theoretical results on the effect of Al substitution in FeGa3, obtained by x-ray diffraction (XRD),…
The optical properties of thin films of intermetallic Au$_{3}$Hf were experimentally investigated for the first time, which display clear plasmonic properties in the optical and near infrared region with negative permittivity. In contrast…
We report the growth of thin films of the mixed valence compound YbAl$_{3}$ on MgO using molecular-beam epitaxy. Employing an aluminum buffer layer, epitaxial (001) films can be grown with sub-nm surface roughness. Using x-ray diffraction,…
The (secondary) electron emission from multilayered Al$_2$O$_3$/TiN membranes has been investigated with a hemispherical collector system in a scanning electron microscope for electrons with energies between 0.3 and 10 keV. These ultra-thin…
We investigate sputtering of a Ti3SiC2 compound target at temperatures ranging from RT (no applied external heating) to 970 oC as well as the influence of the sputtering power at 850 oC for the deposition of Ti3SiC2 films on Al2O3(0001)…
In this article, high composition (>35%) thick (>30 nm) barrier AlGaN/AlN/GaN HEMT structure grown on a sapphire substrate with ultra-low sheet resistivity (<250 \Omega / \Box ) is reported. Optimization of growth conditions, such as…
Building on the recent discovery of tough nanocrystalline Cu-Zr alloys with amorphous intergranular films, this paper investigates ternary nanocrystalline Cu-Zr-Hf alloys with a focus on understanding how alloy composition affects the…
Due to its tunable band gap, anisotropic behavior, and superior thermoelectric properties, device applications using layered tellurene (Te) are becoming attractive. Here, we report a thinning technique for exfoliated tellurene nanosheets…
Ohmic contacts to high (>70\%) Al content n-type Al$_x$Ga$_{1-x}$N ultra-wide bandgap semiconductor layers in nitride electronic and photonic devices are typically fabricated by a lift-off process and high temperature ($>700^\circ$C)…
LaFeAsO1-xFx thin films were deposited successfully on (001)-oriented LaAlO3 and MgO substrates from stoichiometric LaFeAsO1-xFx polycrystalline targets with fluorine concentrations up to x = 0.25 by PLD. Room temperature deposition and…
Structural and electronic properties of amorphous and single-phase polycrystalline films of gamma- and kappa-In2Se3 have been measured. The stable gamma phase nucleates homogeneously in the film bulk and has a high resistivity, while the…
Freestanding GdBa2Cu3O7 (GdBCO) superconducting thin films were fabricated using a water-soluble Sr3Al2O6 (SAO) sacrificial layer in combination with thermal release tape. An amorphous Al2O3 capping layer was introduced to suppress crack…
Thin films of phase pure pyrochlore Gd2Ti2O7 have been synthesized by RF magnetron sputtering. The films were prepared from oxide targets in 50%O2/Ar atmosphere and deposited on 111 YSZ substrates at a temperature of 800C. The pyrochlore…
We present the temperature- and thickness-dependent structural and morphological evolution of strain induced transformations in highly-strained epitaxial BiFeO3 films deposited on LaAlO3 (001) substrates. Using high-resolution X-ray…
Nb3Sn and V3Si thin films are promising candidates as thin films for the next generation of superconducting radio-frequency (SRF) cavities. However, sputtered films often suffer from stoichiometry and strain issues during deposition and…
We report the direct observation of superconductivity in nitridized-aluminum thin films. The films are produced by sputtering deposition of aluminum in a controlled mixture of nitrogen diluted in argon. The concentration of applied nitrogen…
To study the size and strain rate dependency of copper polycrystalline microstructures, a multi-layered copper/Al$_2$O$_3$ thin film was deposited on a Si substrate using a hybrid deposition system (combining physical vapour and atomic…
Despite widespread interest in the phase-change applications of vanadium dioxide (VO$_2$), the fabrication of high-quality VO$_2$ thin films with elevated transition temperatures (TIMT) and high Insulator-Metal-Transition resistance…
In this work, the electrical properties of Al2O3 films deposited by reactive ion sputtering were investigated by means of morphological, chemical and electrical characterizations. This insulating layer suffers of an electron trapping that…
Thin films of the high-temperature superconductor HgBa$_2$CaCu$_2$O$_{6+\delta}$ have been prepared on SrTiO$_3$ substrates by pulsed-laser deposition of precursor films and subsequent annealing in mercury-vapor atmosphere. The…