Related papers: Epitaxial Growth and Band Structure of Antiferroma…

The antiferromagnetic topological insulator has attracted lots of attention recently, as its intrinsic magnetism and topological property makes it a potential material to realize the quantum anomalous Hall effect (QAHE) at relative high…

CeSiI has been recently isolated in the ultrathin limit, establishing CeSiI as the first intrinsic two-dimensional van der Waals heavy-fermion material up to 85 K. We show that, due to the strong Ce spin-orbit coupling, the local moments…

We have selectively grown thin epitaxial GaAs films on Ge substrates with the aid of a 200 nm thin SiO2 mask layer. The selectively grown structures have lateral sizes ranging from 1 um width up to large areas of 1 by 1 mm2. The growth is…

We present the observation of an isostructural Mott insulator-metal transition in van-der-Waals honeycomb antiferromagnet V$_{0.9}$PS$_3$ through high-pressure x-ray diffraction and transport measurements. The MPX$_3$ family of magnetic…

Quasi van der Waals Epitaxy (qvdWE) has been realized for decades at the interfaces between 3D and 2D materials or van der Waals materials. The growth of magnetic topological insulators (MTI) Cr: (BixSb1-x)2Te3 (CBST) on GaAs (111)…

CrI3 is a layered ferromagnetic insulator that has recently attracted enormous interest as it was the first example of a stand-alone monolayer ferromagnet, paving the way towards the study of two-dimensional magnetic materials and their use…

Rare-earth ion dopants in solid-state hosts are ideal candidates for quantum communication technologies such as quantum memory, due to the intrinsic spin-photon interface of the rare-earth ion combined with the integration methods available…

From first principles calculations we investigate the electronic structure and the magnetic properties of EuO under hydrostatic and epitaxial forces. There is a complex interdependence of the O 2p and Eu 4f and 5d bands on the magnetism in…

Two-dimensional materials (2D) arranged in hybrid van der Waals (vdW) heterostructures provide a route toward the assembly of 2D and conventional III-V semiconductors. Here, we report the structural and electronic properties of single layer…

This paper reports that ~10-nm-thick FeSe thin films exhibit insulator-like behavior in terms of the temperature dependence of their electrical resistivity even though bulk FeSe has a metallic electronic structure that has been confirmed by…

We report the first combined study of the low-energy electronic band structure of epitaxial Sr$_3$Ru$_2$O$_7$ films using angle-resolved photoemission spectroscopy and density functional theory. The complete Fermi-surface topography of the…

A theory of heterostructures comprised of LaTiO$_3$ (a Mott insulator) and SrTiO$_3$ (a band insulator) is presented. The band structure of the Ti $d$% -electrons is treated with a nearest neighbor tight-binding approximation; the electric…

Co40Fe40B20 layers were grown on the Pb0.71Sn0.29Te topological insulator substrates by laser molecular beam epitaxy (LMBE) method, and the growth conditions were studied. The possibility of growing epitaxial layers of a ferromagnet on the…

The epitaxial integration of anisotropic materials with mainstream cubic semiconductors opens new routes to advanced electronic and photonic devices with directional properties. In this work, we synthesize heteroepitaxial thin films of…

Achieving large-scale growth of two-dimensional (2D) ferromagnetic materials with high Curie temperature (TC) and perpendicular magnetic anisotropy (PMA) is highly desirable for the development of ultra-compact magnetic sensors and magnetic…

Monolayer Tellurium (Te) or tellurene has been suggested by a recent theory as a new two-dimensional (2D) system with great electronic and optoelectronic promises. Here we present an experimental study of epitaxial Te deposited on highly…

We performed density functional theory (DFT) calculations for a bi-layered heterostructure combining a graphene layer with a MoS2 layer with and without intercalated Li atoms. Our calculations demonstrate the importance of the van der Waals…

Growing stress-free epitaxial films by van der Waals epitaxy (vdWE) is of interest for realizing flexible optoelectronics and energy devices from freestanding epilayers. However, vdWE of non-layered materials is often presumed or claimed on…

Monolayer epitaxial graphene is an appropriate candidate for a wide variety of electronic and optical applications. One advantage of growing graphene on the Si face of SiC is that it develops as a single crystal, as does the layer…

A van der Waals material, MoTe2 with a monoclinic 1T' crystal structure is a candidate for three-dimensional (3D) second-order topological insulators (SOTIs) hosting gapless hinge states and insulating surface states. However, due to the…