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Hexagonal Si2Te2 monolayers (ML-Si2Te2) were predicted to show strain-dependent band-crossover between semiconducting and room-temperature quantum spin Hall phases. However, investigations on this artificial two-dimensional (2D) material…
Structural moir\'e superstructures arising from two competing lattices may lead to unexpected electronic behavior, such as superconductivity or Mottness. Most investigated moir\'e heterostructures are based on van der Waals (vdW) materials,…
Large-area growth of continuous transition metal dichalcogenides (TMDCs) layers is a prerequisite to transfer their exceptional electronic and optical properties into practical devices. It still represents an open issue nowadays. Electric…
A broad family of the nowadays studied low-dimensional systems, including 2D materials, demonstrate many fascinating properties, which however depend on the atomic composition as well as on the system dimensionality. Therefore, the studies…
Interfacing two-dimensional bismuth with a magnetic layer provides a promising route towards realizing higher-order topological phases. In particular, bismuthene on a ferromagnetic insulator substrate has been theoretically proposed by…
Large area MoS2 and WS2 van der Waals epitaxial thin films with complete control over number of layers including monolayer is grown by pulsed laser deposition utilizing slower growth kinetics. The films grown on c-plane sapphire show…
Scalable fabrication of magnetic 2D materials and heterostructures constitutes a crucial step for scaling down current spintronic devices and the development of novel spintronic applications. Here, we report on van der Waals (vdW) epitaxy…
A Moire superlattice on the topological insulator surface is predicted to exhibit many novel properties but has not been experimentally realized. Here, we developed a two-step growth method to successfully fabricate a topological insulator…
We report on the epitaxial growth and surface structure of infinite-layer cuprate Sr1-xNdxCuO2 films on SrTiO3(001) substrates by combining ozone-assisted molecular beam epitaxy and in situ scanning tunneling microscopy. Careful substrate…
In a latest experimental advance, graphene-like and insulating BeO monolayer was successfully grown over silver surface by molecular beam epitaxy (ACS Nano 15(2021), 2497). Inspired by this accomplishment, in this work we conduct…
A new compound with a quasi-two-dimensional array of FeSe3O tetrahedra and an orthorombic structure, namely BaFe2Se2O, has been successfully fabricated. Experimental results show that this compound is an insulator and has an…
Epitaxial thin films of the substitutionally alloyed half-Heusler series CoTi$_{1-x}$Fe$_x$Sb were grown by molecular beam epitaxy on InAlAs/InP(001) substrates for concentrations 0.0$\leq$x$\leq$1.0. The influence of Fe on the structural,…
We report that thin films of a prototype topological insulator, Bi$_{2}$Se$_{3}$, can be epitaxially grown onto the (0001) surface of BaFe$_{12}$O$_{19}$(BaM), a magnetic insulator with high Curie temperature and large perpendicular…
Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by…
MnBi2Te4 has recently been predicted and shown to be a magnetic topological insulator with intrinsic antiferromagnetic order. However, it remains a challenge to grow stoichiometric MnBi2Te4 films by molecular beam epitaxy (MBE) and to…
Monolayer V2O3, a two-dimensional magnetic topological insulator with intrinsic ferromagnetic order and a nontrivial band gap, offers a promising platform for realizing quantum anomalous Hall (QAH) states. Using first-principles density…
Vertically stacking two dimensional (2D) materials can enable the design of novel electronic and optoelectronic devices and realize complex functionality. However, the fabrication of such artificial heterostructures in wafer scale with an…
Molecular beam epitaxy of Ge (111) thin films on epitaxial-Gd2O3/Si(111) substrates is reported, along with a systematic investigation of the evolution of Ge growth, and structural defects in the grown epilayer. While Ge growth begins in…
We report the successful growth of tetragonal FeS film with one or two unit-cell (UC) thickness on SrTiO3(001) substrate by molecular beam epitaxy. Large lattice constant mismatch with the substrate leads to high density of defects in…
Layered van der Waals (vdW) materials grown by physical vapor deposition techniques are generally assumed to have a weak interaction with the substrate during growth. This leads to films with relatively small domains that are usually…