Related papers: Enhanced all-optical switching and domain wall vel…
Single pulse all-optical switching of magnetization (AOS) in Co/Gd based synthetic ferrimagnets carries promises for hybrid spintronic-photonic integration. A crucial next step progressing towards this vision is to gain insight into AOS and…
All-optical switching (AOS) of magnetic materials describes the reversal of the magnetization using short (femtosecond) laser pulses, and has been observed in a variety of materials. In the past decade it received extensive attention due to…
Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes of the rapidly advancing field of nanomagnetism in recent years, with high potential for enabling novel, fast and energy-efficient memory…
Using photo-emission electron microscopy with X-ray magnetic circular dichroism as a contrast mechanism, new insights into the all-optical magnetization switching (AOS) phenomenon in GdFe based rare-earth transition metal ferrimagnetic…
All-optical switching (AOS) of magnetization by a single femtosecond laser pulse in Co/Gd based synthetic ferrimagnets is the fastest magnetization switching process. On the other hand, He ion irradiation has become a promising tool for…
In this work, we investigate single-shot all-optical switching (AOS) in Tb/Co/Gd/Co/Tb multilayers in an attempt to establish AOS in synthetic ferrimagnets with high perpendicular magnetic anisotropy. In particular, we study the effect of…
We demonstrate single shot al optical switching (AOS) in rare earth free CoFeB/MgO magnetic tunnel junctions (MTJs), a material system widely adopted in spin transfer torque magnetic random access memory (STT MRAM). By tuning the capping…
Ultrafast all-optical magnetization switching (AOS) holds great promise for nextgeneration spintronic memory and hybrid spintronic-photonic systems. However, most implementations to date rely on bulky free-space optical setups, limiting…
A femtosecond laser pulse is able to switch the magnetic state of a 3d-4f ferrimagnetic material on a pico-second time scale. Devices based on this all-optical switching (AOS) mechanism are competitive candidates for ultrafast memory…
Domain wall (DW) dynamics in antiferromagnetic (AFM) systems offer the advantages over their ferromagnetic counterparts of having faster and more energy efficient manipulation due to the absence of net magnetization, leading to reduced…
Ultrafast control of the magnetization in ps timescales by fs laser pulses offers an attractive avenue for applications such as fast magnetic devices for logic and memory. However, ultrafast helicity-independent all-optical switching…
Given the development of hybrid spintronic-photonic devices and chiral magnetic structures, a combined interest in all-optical switching (AOS) of magnetization and current-induced domain wall motion in synthetic ferrimagnetic structures…
We measured the spin-orbit torques (SOTs), current-induced switching, and domain wall (DW) motion in synthetic ferrimagnets consisting of Co/Tb layers with differing stacking order grown on a Pt underlayer. We find that the SOTs, magnetic…
In a number of recent experiments, it has been shown that femtosecond laser pulses can control magnetization on picosecond timescales, which is at least an order of magnitude faster compared to conventional magnetization dynamics. Among…
Using the microscopic three temperature model, we simulate single-pulse all-optical switching (AOS) in alloys and bilayers consisting of Co and Gd. In particular, we investigate its dependence on the spin-flip probability of Gd…
Control of magnetism without using magnetic fields enables large-scale integration of spintronic devices for memory, computation and communication in the beyond-CMOS era. Mechanisms including spin torque transfer, spin Hall effect, and…
Magnetic tunnel junctions (MTJs) are elementary units of magnetic memory devices. For high-speed and low-power data storage and processing applications, fast reversal by an ultrashort laser pulse is extremely important. We demonstrate…
We use the thickness of Cu layers to control all-optical switching of magnetization in adjacent Gd$_{24}$(Fe$_9$0Co$_{10}$)$_{76}$ films. While increasing the Cu thickness from 5 to 900nm has no effect on the switching threshold, it…
We present an experimental and theoretical investigation of all-optical switching by single femtosecond laser pulses. Our experimental results demonstrate that, unlike rare earth-transition metal ferrimagnetic alloys, Pt/Co/[Ni/Co]$_N$/Gd…
We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque operated memories. We study the influence of the boron content in…