Related papers: Performance Limit and Coding Schemes for Resistive…
Resistive random-access memory (ReRAM) is an emerging non-volatile memory technology for high-density and high-speed data storage. However, the sneak path interference (SPI) occurred in the ReRAM crossbar array seriously affects its data…
A novel framework for performance analysis and code design is proposed to address the sneak path (SP) problem in resistive random-access memory (ReRAM) arrays. The main idea is to decompose the ReRAM channel, which is both non-ergodic and…
Resistive random access memory (ReRAM) is a promising emerging non-volatile memory (NVM) technology that shows high potential for both data storage and computing. However, its crossbar array architecture leads to the sneak path problem,…
Due to the crossbar array architecture, the sneak-path problem severely degrades the data integrity in the resistive random access memory (ReRAM). In this letter, we investigate the channel quantizer design for ReRAM arrays with multiple…
The maximum achievable rate is derived for resistive random-access memory (ReRAM) channel with sneak path interference. Based on the mutual information spectrum analysis, the maximum achievable rate of ReRAM channel with independent and…
Despite the great promises that the resistive random access memory (ReRAM) has shown as the next generation of non-volatile memory technology, its crossbar array structure leads to a severe sneak path interference to the signal read back…
Resistive random-access memory is one of the most promising candidates for the next generation of non-volatile memory technology. However, its crossbar structure causes severe "sneak-path" interference, which also leads to strong inter-cell…
Resistive Random Access Memory (ReRAM) based Processing In Memory (PIM) Accelerator has emerged as a promising computing architecture for memory intensive applications, such as Deep Neural Networks (DNNs). However, due to its immaturity,…
Resistive memories are considered a promising memory technology enabling high storage densities with in-memory computing capabilities. However, the readout reliability of resistive memories is impaired due to the inevitable existence of…
In recent times, Resistive RAMs (ReRAMs) have gained significant prominence due to their unique feature of supporting both non-volatile storage and logic capabilities. ReRAM is also reported to provide extremely low power consumption…
Crossbar resistive memory with the 1 Selector 1 Resistor (1S1R) structure is attractive for nonvolatile, high-density, and low-latency storage-class memory applications. As technology scales down to the single-nm regime, the increasing…
A new channel coding approach was proposed in [1] for random multiple access communication over the discrete-time memoryless channel. The coding approach allows users to choose their communication rates independently without sharing the…
Resistive Random Access Memory (RRAM) crossbar arrays are an attractive memory structure for emerging nonvolatile memory due to their high density and excellent scalability. Their ability to perform logic operations using RRAM devices makes…
Multipath interference is an ubiquitous phenomenon in modern communication systems. The conventional way to compensate for this effect is to equalize the channel by estimating its impulse response by transmitting a set of training symbols.…
Resistive random-access memory (ReRAM) is a promising technology for designing hardware accelerators for deep neural network (DNN) inferencing. However, stochastic noise in ReRAM crossbars can degrade the DNN inferencing accuracy. We…
Redox-based resistive switching devices (ReRAM) are an emerging class of non-volatile storage elements suited for nanoscale memory applications. In terms of logic operations, ReRAM devices were suggested to be used as programmable…
Resistive random-access memory (RRAM) is gaining popularity due to its ability to offer computing within the memory and its non-volatile nature. The unique properties of RRAM, such as binary switching, multi-state switching, and device…
Deep learning-based recommendation models (DLRMs) are widely deployed in commercial applications to enhance user experience. However, the large and sparse embedding layers in these models impose substantial memory bandwidth bottlenecks due…
Compute in-memory (CIM) is a promising technique that minimizes data transport, the primary performance bottleneck and energy cost of most data intensive applications. This has found wide-spread adoption in accelerating neural networks for…
As conventional memory technologies are challenged by their technological physical limits, emerging technologies driven by novel materials are becoming an attractive option for future memory architectures. Among these technologies,…