Related papers: Topological Hall effect in single thick SrRuO3 lay…
Breaking time-reversal symmetry in three-dimensional topological insulator thin films can lead to different topological quantum phases, such as the Chern insulator (CI) phase, and the axion insulator (AI) phase. Using first-principles…
We study the three-dimensional topological insulator (Bi$_{1-x}$Sb$_{x}$)$_{2}$Te$_{3}$ in its ultrathin limit i.e. when the thickness is of the same order as the surface state penetration depth. It is expected that in this limit a…
The quantum anomalous Hall effect is a intriguing topological nontrivial phase arising from spontaneous magnetization and spin-orbit coupling. However, the tremendously harsh realizing requirements of the quantum anomalous Hall effects in…
We consider the Anomalous Hall Effect (AHE) in thin disordered ferromagnetic films. Using a microscopic model of electrons in a random potential of identical impurities including spin-orbit coupling, we develop a general formulation for…
In this paper we theoretically investigate the photonic spin Hall effect (SHE) of a Gaussian beam reflected from the interface between air and topological insulators (TIs). The photonic SHE is attributed to spin-orbit coupling and manifests…
Exploring exotic interface magnetism due to charge transfer and strong spin-orbit coupling has profound application in future development of spintronic memory. Here, the emergence, tuning and interpretation of hump-shape Hall Effect from a…
Transition metal oxide hetero-structure has great potential for multifunctional devices. However, the degraded physical properties at interface, known as dead-layer behavior, present a main obstacle for device applications. Here we present…
The search of new topological insulators that demonstrate the quantum anomalous Hall effect (QAHE) is a cutting-edge research topic in condensed matter physics and materials science. So far, the QAHE has been observed only in Cr-doped…
Complex oxide heterostructures are hot candidates for post CMOS multi-functional devices. Especially in spintronics applications ferromagnetic oxides may play a key role because they can exhibit extraordinary high spin polarization. Indeed,…
The Dirac electrons occupying the surface states (SSs) of topological insulators (TIs) have been predicted to exhibit many exciting magneto-transport phenomena. Here we report on the first experimental observation of an unconventional…
Manipulation of octahedral distortion at atomic length scale is an effective means to tune the physical ground states of functional oxides. Previous work demonstrates that epitaxial strain and film thickness are variable parameters to…
The anomalous Hall effect (AHE) is studied on the surface of a 3D magnetic topological insulator. By applying a modified semi-classical framework, all three contributions to the AHE, the intrinsic Berry phase curvature effect, the side-jump…
We investigate topological properties in the Fe(Te,Se) thin films. We find that the single layer FeTe$_{1-x}$Se$_x$ has nontrivial $Z_2$ topological invariance which originates from the parity exchange at $\Gamma$ point of Brillouin zone.…
Three-dimensional (3D) topological insulators (TIs) are known to carry 2D Dirac-like topological surface states in which spin-momentum locking prohibits backscattering. When thinned down to a few nanometers, the hybridization between the…
Magnetic materials exhibiting topological Dirac fermions are attracting significant attention for their promising technological potential in spintronics. In these systems, the combined effect of the spin-orbit coupling and magnetic order…
Recently, \b{eta}-Mn-type Co-Zn-Mn alloys have gained particular attentions as a new class of chiral magnets hosting skyrmion phase. In this work, a giant topological Hall effect(THE)is observed during the wide temperature range below 220 K…
Magnetite epitaxial thin films have been prepared by pulsed laser deposition at 340 C on MgO and Si substrates. One key result is that the thin film properties are almost identical to the properties of bulk material. For 40 - 50 nm thick…
A uniform one-unit-cell-high step on the SrTiO3 substrate is a prerequisite for growing high-quality epitaxial oxide heterostructures. However, it is inevitable that defects induced by mixed substrate surface termination exist at the…
The anomalous Hall effect (AHE) occurs in magnetic systems and also unexpectedly in non-magnetic materials adjacent to magnetic insulators via the heterointerface interactions. However, the AHE in heterostructures induced by magnetic…
Metallic oxide SrVO3 represents a prototype system for the study of the mechanism behind thickness-induced metal-to-insulator transition (MIT) or crossover in thin films due to its simple cubic symmetry with one electron in the 3d state in…