Related papers: Carrier Drift Control of Spin Currents in Graphene…
We consider a straight one-dimensional potential step created across a graphene flake. Charge and spin transport through such a potential step are studied in the presence of both intrinsic and extrinsic (Rashba) spin-orbit coupling (SOC).…
Valley filtering processes have been explored in different graphene-based configurations and scenarios to control transport responses. Here we propose graphene multi-terminal set-ups properly designed to obtain valley filtered currents in a…
Long-distance spin transport through anti-ferromagnetic insulators (AFMIs) is a long-standing goal of spintronics research. Unlike conventional spintronics systems, monolayer graphene in quantum Hall regime (QH) offers an unprecedented…
We apply the Wigner function formalism to derive drift-diffusion transport equations for spin-polarized electrons in a III-V semiconductor single quantum well. Electron spin dynamics is controlled by the linear in momentum spin-orbit…
Metal/graphene interfaces generated by electrode deposition induce barriers or potential modulations influencing the electronic transport properties of graphene based devices. However, their impact on the local mechanical properties of…
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene…
We investigate spin transport in diffusive graphene nanoribbons with both clean and rough zigzag edges, and long-range potential fluctuations. The long-range fields along the ribbon edges cause the local doping to come close to the charge…
We investigate here how the current flows over a bilayer graphene in the presence of an external electric field perpendicularly applied (biased bilayer). Charge density polarization between layers in these systems is known to create a layer…
Microscopic corrugations are ubiquitous in graphene even when placed on atomically flat substrates. These result in random local strain fluctuations limiting the carrier mobility of high quality hBN-supported graphene devices. We present…
We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of the liquid within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality…
The conventional definition of spin current is incomplete and unphysical in describing spin transport in systems with spin-orbit coupling. A proper and measurable spin current is established in this study, which fits well into the standard…
Spintronics relies on the ability to transport and utilize the spin properties of an electron rather than its charge. We describe a spin rachet at the single-electron level that produces spin currents with no net bias or charge transport.…
Tailor-made graphene nanostructures can exhibit symmetry-protected topological boundary states that host localized spin-$1/2$ moments. However, one frequently observes charge transfer on coinage metal substrates, which results in spinless…
We performed spin transport measurements on boron nitride based single layer graphene devices with mobilities up to 40 000 cm${^2}$V$^{-1}$s$^{-1}$. We could observe spin transport over lengths up to 20 {\mu}m at room temperature, the…
Graphene hosts an ultra-clean electronic system with electron-electron collisions being the dominant source of scattering above liquid nitrogen temperatures. In this regime, the motion of the electron fluid resembles the flow of classical…
We propose a directional switching effect in a metallic device. To such end we exploit a graphene-based device with a three-terminal geometry in the presence of a magnetic field. We show that unidirectional charge and valley currents can be…
we have fabricated transparent electronic devices based on graphene materials with thickness down to one single atomic layer by the transfer printing method. The resulting printed graphene devices retain high field effect mobility and have…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
We propose a non-magnetic, pseudospin-based version of a spin valve, in which the pseudospin polarization in neighboring regions of a graphene bilayer is controlled by external gates. Numerical calculations demonstrate a large on-off ratio…
We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…