Related papers: Silicon emissivity as a function of temperature
We report the detection of X-ray emission from the jet-driving symbiotic star MWC 560. We observed MWC 560 with XMM-Newton for 36 ks. We fitted the spectra from the EPIC pn, MOS1 and MOS2 instruments with XSPEC and examined the light curves…
We calculate, by means of fluctuational electrodynamics, the thermal emission of an aperture filled by vacuum or a material at temperature T. We show that thermal emission is very different whether the aperture size is large or small…
Cryogenic CMOS technology (cryo-CMOS) offers a scalable solution for quantum device interface fabrication. Several previous works have studied the characterization of CMOS technology at cryogenic temperatures for various process nodes.…
Using a realistic model, the mode Gruneisen parameters and the temperature dependent coefficient of linear thermal expansion are calculated for amorphous silicon. The resulting values of the Gruneisen parameters differ from the crystalline…
We design a resistive heater optimized for efficient and low-loss optical phase modulation in a silicon-on-insulator (SOI) waveguide and characterize the fabricated devices. Modulation is achieved by flowing current perpendicular to a new…
Low mechanical loss materials are needed to further decrease thermal noise in upcoming gravitational wave detectors. We present an analysis of the contribution of Akhieser and thermoelastic damping on the experimental results of resonant…
Flexoelectricity, an electromechanical coupling between strain gradient and polarization, offers a promising dimension to enrich silicon-based devices. Although the flexoelectricity of silicon is known, some fundamental aspects remain…
We report on experimental observation of laser-like emission from a periodic all-silicon nanostructure formed on an electronic grade silicon-on-insulator wafer, using a highly-uniform hexagonal self-organized array of nanopores as an etch…
Amorphization of silicon is crucial to applications in photonics, microelectronics and solar cell technologies. Ultrafast lasers have been used to generate amorphous silicon from crystalline silicon using rapid nonthermal melting and…
Fitting oscillator models to variable-angle spectroscopic ellipsometry (VASE) data can lead to non-unique, unphysical results. We demonstrate using temperature-dependent trends to prevent overfitting and ensure model physicality. As a case…
Thermal emission is the process by which all objects at non-zero temperatures emit light, and is well-described by the classic Planck, Kirchhoff, and Stefan-Boltzmann laws. For most solids, the thermally emitted power increases…
Excellent jet energy measurement is important at the International Linear Collider (ILC) because most of interesting physics processes decay into multi-jet final states. We employ a particle flow method to reconstruct particles, hence…
10 H SiC thin films are potential candidates for devices that can be used in high temperature and high radiation environment. Measurement of thermal conductivity of thin films by a non-invasive method is very useful for such device…
Silicon-vacancy qubits in silicon carbide (SiC) are emerging tools in quantum technology applications due to their excellent optical and spin properties. In this paper, we explore the effect of temperature and strain on these properties by…
Using the Cryogenic, High-Accuracy Refraction Measuring System (CHARMS) at NASA's Goddard Space Flight Center, we have measured the absolute refractive index of five specimens taken from a very large boule of Corning 7980 fused silica from…
The increasing scale of cryogenic detector arrays for sub-millimeter and millimeter wavelength astrophysics has led to the need for large aperture, high index of refraction, low loss, cryogenic refracting optics. Silicon with n = 3.4, low…
Cryogenic semiconductor detectors operated at temperatures below 100 mK are commonly used in particle physics experiments searching for dark matter. The largest such germanium and silicon detectors, with diameters of 100 mm and thickness of…
We have characterized thermal susceptibilities of the spectral band at 740 nm of silicon-vacancy (SiV) centers in Si- and Si,P-doped nanodiamonds over a temperature range from 295 K to 350 K, which is of interest for thermometry in…
We present a detailed theoretical analysis of the local radio emission at the lower part of the solar atmosphere. To accomplish this, we have used a numerical code to simulate the emission and transport of high frequency electromagnetic…
Experiments performed in the last years demonstrated slow relaxations and aging in the conductance of a large variety of materials. Here, we present experimental and theoretical results for conductance relaxation and aging for the…