Related papers: Anomalous Hall Effect in Layered Ferrimagnet MnSb2…
Understanding the effects of interfacial modification to the functional properties of magnetic topological insulator thin films is crucial for developing novel technological applications from spintronics to quantum computing. Here, we…
Materials that intrinsically possess both magnetism and topological states represent a key frontier of quantum materials research. Recently, Mn2(Bi/Sb)2Te5 has emerged as a promising candidate for hosting topological surface states coupled…
Noncollinear magnets with near-zero net magnetization and nontrivial bulk electronic topology hold significant promise for spintronic applications, though their scarcity necessitates purposeful design strategies. In this work, we report a…
The intricate interplay between nontrivial topology and magnetism in two-dimensional (2D) materials has led to the emergence of many novel phenomena and functionalities. An outstanding example is the quantum anomalous Hall (QAH) effect,…
A very large negative magnetoresistance (LNMR) is observed in the insulating regime of the antiferromagnet BaMn$_2$Bi$_2$ when a magnetic field is applied perpendicular to the direction of the sublattice magnetization. High perpendicular…
We prepared high epitaxial thin films of the compound Sr_2FeMoO_6 with narrow rocking curves by pulsed laser deposition. The diagonal and nondiagonal elements of the resistivity tensor were investigated at temperatures from 4 K up to room…
In [B. Binz, A. Vishwanath and V. Aji, Phys. Rev. Lett. 96, 207202 (2006)], a magnetic structure that breaks time reversal symmetry in the absence of net magnetization was proposed as an explanation for the high pressure "partially ordered"…
In metallic ferromagnets, the Berry curvature of underlying quasiparticles can cause an electric voltage perpendicular to both magnetization and an applied temperature gradient, a phenomenon called the anomalous Nernst effect (ANE). Here,…
The origin of anomalous Hall effect (AHE) in ferromagnetic metallic glasses (MGs) is not yet understood completely. Here, the AHE is explored in Fe78Si9B13 MGs. We find the behavior of resistivity at low temperature seems to be more likely…
Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to…
The anomalous Hall effect, observed in conducting ferromagnets with broken time-reversal symmetry, offers the possibility to couple spin and orbital degrees of freedom of electrons in ferromagnets. In addition to charge, the anomalous Hall…
The electrical resistivity, anisotropic magnetoresistance (AMR), and anomalous Hall effect of ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films has been investigated. The data show a behavior characteristic for a ferromagnetic…
Altermagnets, recently proposed as a third category of collinear magnets, combine the features of zero net magnetization in antiferromagnets and the spin splitting in ferromagnets. While abundant spectroscopic evidence for altermagnetism…
We report thermal conductivity and Seebeck effect measurements on Mn(Bi1-xSbx)2Te4 (MBST) with x = 0.26 under applied magnetic fields below 50 K. Our data shows clear indications of the electronic structure transition induced by the…
We present a study of the magnetoresistance and Hall effect in the narrow-gap semiconductor FeSb2 at low temperatures. Both the electrical and Hall resistivities show unusual magnetic field dependence in the low-temperature range where a…
Noncollinear antiferromagnets have recently been attracting considerable interest partly due to recent surprising discoveries of the anomalous Hall effect (AHE) in them and partly because they have promising applications in…
Berry curvature, as the imaginary component of quantum geometry, plays a crucial role in condensed matter physics. The spatial distribution of Berry curvature can be characterized by its dipole and multipole moments, which can induce the…
Ferroelectricity, anti-ferromagnetism (AFM) and quantum anomalous Hall effect (QAHE) are three fundamental phenomena in the field of condensed matter physics, which could enable the realization of novel devices and thus attracts great…
Itinerant ferromagnets constitute an important class of materials wherein spin-polarization can affect the electric transport properties in nontrivial ways. One such phenomenon is anomalous Hall effect which depends on the details of the…
Magnetic topological insulators, possessing both magnetic order and topological electronic structure, provides an excellent platform to research unusual physical properties. Here, we report a high-pressure study on the anomalous Hall effect…