Related papers: Electron transport through antiferromagnetic spin …
Antiferromagnetic (AFM) and ferromagnetic (FM) skyrmions possess unique advantages for spintronic applications. AFM skyrmions eliminate the skyrmion Hall effect and exhibit fast dynamics, whereas FM skyrmions are easier to nucleate and…
Current flowing is studied in magnetic junctions consisting of a ferromagnetic metal (FM), antiferromagnetic conductor (AFM) and a nonmagnetic metal closing the electric circuit. The FM layer with high anisotropy and pinned spins of the…
Non-collinear antiferromagnets (nAFMs) with a small net magnetic moment offer new opportunities for ultrafast spintronic devices, owing to unique physical properties. While in ferromagnets and collinear AFMs the spin current polarization is…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
Magnetic tunnel junctions (MTJs) are the key building blocks of high-performance spintronic devices. While conventional MTJs rely on ferromagnetic (FM) materials, employing antiferromagnetic (AFM) compounds can significantly increase…
We identify a mechanism to convert skyrmions and antiskyrmions into their antiferromagnetic (AFM) counterparts via interfacial engineering. The key idea is to combine properties of an antiferromagnet and a spin-orbit (SO) coupled metal.…
Altermagnet (AM) is a novel time reversal symmetry broken magnetic phase with $d$-wave order which has been experimentally realized recently. We discuss theoretical models of altermagnet based systems on lattice and in continuum. We show…
We study spin-dependent electron transport through a ferromagnetic-antiferromagnetic-normal metal tunneling junction subject to a voltage or temperature bias, in the absence of spin-orbit coupling. We derive microscopic formulas for various…
Surface plasmons are the collective electron excitations in metallic systems and the associated electromagnetic wave usually has the transverse magnetic (TM) polarization. On the other hand, spin waves are the spin excitations perpendicular…
A vital goal in spintronics is the efficient electrical generation of spin currents, a pursuit that has recently focused on using antiferromagnets (AFMs) as spin current sources. It has been demonstrated that antiferromagnets with broken PT…
It is demonstrated theoretically that a thin layer of an anisotropic antiferromagnetic (AFM) insulator can effectively conduct spin current by excitation of a pair of evanescent AFM spin wave modes. The spin current flowing through the AFM…
By nonperturbatively solving the nonequilibrium Anderson two-impurity model with the hierarchical equations of motion approach, we report a robust ferromagnetic (FM) phase in series-coupled double quantum dots, which can suppress the…
When a spin-polarized current flows through a ferromagnetic (FM) metal, angular momentum is transferred to the background magnetization via spin-transfer torques. In antiferromagnetic (AFM) materials, however, the corresponding problem is…
The double-exchange (DE) interaction, that is, a ferromagnetic (FM) interaction due to a combination of electron motion and the Hund coupling, is a well known source of a wide class of FM orders. Here, we show that the DE interaction in…
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, and bit density. Realizing this potential requires AFM devices with simultaneous electrical writing and…
The spin filtering effect, distinct decaying lengths experienced by oppositely spin-polarized electrons in a magnetic barrier, generally occurs in ferromagnetic (FM) insulators or semiconductors. With the rise of altermagnetic (ALM)…
Antiferromagnetic (AF) skyrmions are topological spin structures with fully compensated, net-zero magnetization. Compared to their ferromagnetic (FM) skyrmion counterparts, their reduced stray field and enhanced electrical response can…
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard drive read-heads and magnetic random access memories…
Skyrmions are prospected as the potential future of data storage due to their topologically protected spin structures. However, traditional ferromagnetic (FM) skyrmions experience deflection when driven with an electric current, hindering…
Magnetic tunnel junctions (MTJs) are crucial components in high-performance spintronic devices. Traditional MTJs rely on ferromagnetic (FM) materials but significant improvements in speed and packing density could be enabled by exploiting…