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The RowHammer vulnerability in DRAM is a critical threat to system security. To protect against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips rely on undocumented, proprietary, on-die mitigations, commonly known…

This paper challenges the existing victim-focused counter-based RowHammer detection mechanisms by experimentally demonstrating a novel multi-sided fault injection attack technique called Threshold Breaker. This mechanism can effectively…

With lowering thresholds, transparently defending against Rowhammer within DRAM is challenging due to the lack of time to perform mitigation. Commercially deployed in-DRAM defenses like TRR that steal time from normal refreshes~(REF) to…

In order to shed more light on how RowHammer affects modern and future devices at the circuit-level, we first present an experimental characterization of RowHammer on 1580 DRAM chips (408x DDR3, 652x DDR4, and 520x LPDDR4) from 300 DRAM…

RowHammer attacks are a growing security and reliability concern for DRAMs and computer systems as they can induce many bit errors that overwhelm error detection and correction capabilities. System-level solutions are needed as process…

This paper investigates secure low-cost in-DRAM trackers for mitigating Rowhammer (RH). In-DRAM solutions have the advantage that they can solve the RH problem within the DRAM chip, without relying on other parts of the system. However,…

Rowhammer attacks that corrupt level-1 page tables to gain kernel privilege are the most detrimental to system security and hard to mitigate. However, recently proposed software-only mitigations are not effective against such kernel…

This paper focuses on mitigating DRAM Rowhammer attacks. In recent years, solutions like TRR have been deployed in DDR4 DRAM to track aggressor rows and then issue a mitigative action by refreshing neighboring victim rows. Unfortunately,…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in other physically nearby DRAM rows. RowHammer solutions perform preventive actions (e.g.,…

Aggressive memory density scaling causes modern DRAM devices to suffer from RowHammer, a phenomenon where rapidly activating a DRAM row can cause bit-flips in physically-nearby rows. Recent studies demonstrate that modern DRAM chips,…

DRAM cells are susceptible to Data-Disturbance Errors (DDE), which can be exploited by an attacker to compromise system security. Rowhammer is a well-known DDE vulnerability that occurs when a row is repeatedly activated. Rowhammer can be…

We provide an overview of recent developments and future directions in the RowHammer vulnerability that plagues modern DRAM (Dynamic Random Memory Access) chips, which are used in almost all computing systems as main memory. RowHammer is…

RowHammer is a major read disturbance mechanism in DRAM where repeatedly accessing (hammering) a row of DRAM cells (DRAM row) induces bitflips in physically nearby DRAM rows (victim rows). To ensure robust DRAM operation, state-of-the-art…

Since its public introduction in the mid-2010s, the Row Hammer (RH) phenomenon has drawn significant attention from the research community due to its security implications. Although many RH-protection schemes have been proposed by processor…

RowHammer (RH) is a significant and worsening security, safety, and reliability issue of modern DRAM chips that can be exploited to break memory isolation. Therefore, it is important to understand real DRAM chips' RH characteristics.…

Our ISCA 2014 paper provided the first scientific and detailed characterization, analysis, and real-system demonstration of what is now popularly known as the RowHammer phenomenon (or vulnerability) in modern commodity DRAM chips, which are…

Rowhammer is a hardware vulnerability in DRAM memory, where repeated access to memory can induce bit flips in neighboring memory locations. Being a hardware vulnerability, rowhammer bypasses all of the system memory protection, allowing…

As memory scales down to smaller technology nodes, new failure mechanisms emerge that threaten its correct operation. If such failure mechanisms are not anticipated and corrected, they can not only degrade system reliability and…

As Dynamic Random Access Memories (DRAM) scale, they are becoming increasingly susceptible to Row Hammer. By rapidly activating rows of DRAM cells (aggressor rows), attackers can exploit inter-cell interference through Row Hammer to flip…

Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowHammer. RowPress induces bitflips by keeping a DRAM row open…