Related papers: Large spin-Hall effect in Si at room temperature
The spin-orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been…
In Si, spin-phonon interaction is the primary spin relaxation mechanism. At low temperatures, the absence of spin-phonon relaxation will lead to enhanced spin accumulation. Spin accumulation may change the electro-thermal transport within…
The centrosymmetric materials with hidden spin polarization are considered to be the promising candidates for realization of energy efficient spintronics systems and devices. However, the control of hidden spin polarization and resulting…
We predict theoretically that, when a normal metallic thin film (without bulk spin-orbit coupling, such as Cu or Al) is sandwiched by two insulators, two prominent effects arise due to the interfacial spin-orbit coupling: a giant spin-Hall…
Spin Hall effects are a collection of phenomena, resulting from spin-orbit coupling, in which an electrical current flowing through a sample can lead to spin transport in a perpendicular direction and spin accumulation at lateral…
The entanglement of the charge, spin and orbital degrees of freedom can give rise to emergent behavior especially in thin films, surfaces and interfaces. Often, materials that exhibit those properties require large spin orbit coupling. We…
The generation, manipulation and detection of spin-polarized electrons in nanostructures define the main challenges of spin-based electronics[1]. Amongst the different approaches for spin generation and manipulation, spin-orbit coupling,…
In this study, we report first experimental evidence of spin-momentum locking in the topological phonons in an inhomogeneously strained Si thin film. The spin-momentum locking in the topological phonons lead to a longitudinal spin texture…
The spin Hall effect depends crucially on the intrinsic spin-orbit coupling of the energy band. Because of the smaller spin-orbit coupling in silicon, the spin Hall effect is expected to be much reduced. We show that the electric field in…
While tremendous work has gone into spin-orbit torque and spin current generation, charge-to-spin conversion efficiency remains weak in silicon to date, generally stemming from the low spin-orbit coupling (low atomic number, Z) and lack of…
The spin-phonon interaction is the dominant process for spin relaxation in Si, and as thermal transport in Si is dominated by phonons, one would expect spin polarization to influence Si's thermal conductivity. Here we report the…
The development of spintronics and spin-caloritronics devices need efficient generation, detection and manipulation of spin current. The thermal spin current from spin-Seebeck effect has been reported to be more energy efficient than the…
Reversible spin Hall effect comprising the "direct" and "inverse" spin Hall effects was successfully detected at room temperature. This experimental demonstration proves the fundamental relations called Onsager reciprocal relations between…
Manipulation of the magnetization in heavy-metal/ferromagnetic bilayers via the spin-orbit torque requires high spin Hall conductivity of the heavy metal. We measure inverse spin Hall voltage using a co-planar wave-guide based broadband…
Spin current experiences minimal dephasing and scattering in Si due to small spin-orbit coupling and spin-lattice interactions is the primary source of spin relaxation. We hypothesize that if the specimen dimension is of the same order as…
Spin-to-charge current interconversions are widely exploited for the generation and detection of pure spin currents and are key ingredients for future spintronic devices including spin-orbit torques and spin-orbit logic circuits. In case of…
We predict spin Hall angles up to 80% for ultrathin noble metal films with substitutional Bi impurities. The colossal spin Hall effect is caused by enhancement of the spin Hall conductivity in reduced sample dimension and a strong reduction…
Electrically-induced electron spin polarization is imaged in n-type ZnSe epilayers using Kerr rotation spectroscopy. Despite no evidence for an electrically-induced internal magnetic field, current-induced in-plane spin polarization is…
The spin Hall effect and its inverse play key roles in spintronic devices since they allow conversion of charge currents to and from spin currents. The conversion efficiency strongly depends on material details, such as the electronic band…
The observation of spin-dependent transport through organic chiral structures has sparked numerous fundamental and applicative questions ranging from biology to spintronics. By now, there is a broad consensus that the effect results from…