Related papers: A Gd@C82-based single molecular electret device wi…
Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…
Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…
Recent years have shown steady progress in research towards molecular electronics [1,2], where molecules have been investigated as switches [3-5], diodes [6], and electronic mixers [7]. In much of the previous work a Scanning Tunnelling…
Combined diverse two-dimensional (2D) materials for semiconductor interfaces are attractive for electrically controllable carrier confinement to enable excellent electrostatic control. We investigated the transport characteristic in…
We propose a four-terminal device designed to manipulate by all electrical means the spin of a magnetic adatom positioned at the edge of a quantum spin Hall insulator. We show that an electrical gate, able to tune the interface resistance…
We report the investigation of a single quantum dot charge storage device. The device allows selective optical charging of a single dot with electrons, storage of these charges over timescales much longer than microseconds and reliable…
We propose a very sensitive method for measuring the electric dipole moment of the electron using polar molecules embedded in a cryogenic solid matrix of inert-gas atoms. The polar molecules can be oriented in the $\hat{\rm{z}}$ direction…
Anisotropic particles oriented in a specific direction can act as artificial atoms and molecules, and their controlled assembly can result in a wide variety of ordered structures. Towards this, we demonstrate the orientation transitions of…
Controlling electronic transport through a single-molecule junction is crucial for molecular electronics or spintronics. In magnetic molecular devices, the spin degree-of-freedom can be used to this end since the magnetic properties of the…
Quantum spin Hall insulators, recently realized in HgTe/(Hg,Cd)Te quantum wells, support topologically protected, linearly dispersing edge states with spin-momentum locking. A local magnetic exchange field can open a gap for the edge…
While Single Molecule Transistors have been employed in laboratory research for a number of years, there remain many details related to charge transport that have yet to be delineated. We have used the technique of electromigration to…
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the doping controls the occupancy of the lower well while the upper…
We prove experimentally, upon polarization analysis performed on a large statistic of single nanoemitters, that high quality core/shell CdSe/CdS dot-in-rods behave as linear dipoles. Moreover, the dipole in-plane and out-of-plane…
A single electron dynamic memory is designed based on the non-equilibrium dynamics of charge states in electrostatically-defined metallic quantum dots. Using the orthodox theory for computing the transfer rates and a master equation, we…
The majority of experimental realizations of single-electron sources rely on the periodic manipulation of the tunnel junctions through their gate voltages, and thus require a high level of control over the system. To circumvent the…
This project exploits charged particles confined as a storage ring beam (proton, deuteron, possibly $^3$He) to search for an intrinsic electric dipole moment (EDM, $\vec d$) aligned along the particle spin axis. Statistical sensitivities…
We investigate an optically driven quantum computer based on electric dipole transitions within coupled single-electron quantum dots. Our quantum register consists of a freestanding n-type pillar containing a series of pair wise coupled…
A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin…
The mechanisms of electrostatic interactions between two charged dielectric spheres inside a polarizable medium have been investigated, in terms of hypothetical effective dipoles that depict how the positive and negative charge in each…
Using a non-contact atomic force microscope we track and manipulate the position of single electrons confined to atomic structures engineered from silicon dangling bonds (DBs) on the hydrogen terminated silicon surface. By varying the…