Related papers: Supersaturation model for InN PA-MOCVD
Pristine vanadium dioxide (VO2), an insulator-to-metal transition (IMT) material, is grown via furnace oxidation followed by rapid thermal annealing with forming gas (5%H2/95%N2) which reduces surface over-oxides such as V2O5 formed during…
Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates via metalorganic chemical vapor deposition (MOCVD). The…
Molecular contamination of a grazing incidence collector for extreme ultraviolet (EUV) lithography was experimentally studied. A carbon film was found to have grown under irradiation from a pulsed tin plasma discharge. Our studies show that…
An original modification of the standard Pulse Laser Deposition (PLD) method for preparing both undoped and indium doped zinc oxide (ZnO:In) thin films at low substrate temperature is proposed. This preparation method does not demand any…
Ion implantation is a powerful approach for tuning the electrical properties of materials through controlled doping and defect engineering, with applications in thermoelectrics and microelectronics. Scandium nitride (ScN) is particularly…
Predicting the dramatic changes in material properties caused by irradiation damage is key for the design of future nuclear fission and fusion reactors. Self-ion implantation is an attractive tool for mimicking the effects of neutron…
Controlled growth, patterning and placement of carbon nanotube (CNT) thin films for electronic applications are demonstrated. The density of CNT films is controlled by optimizing the feed gas composition as well as the concentration of…
Epitaxial MgB2 thick films were grown on Al2O3 substrates at 600 oC by using the hybrid physical chemical vapor deposition (HPCVD) technique. In order to obtain a high magnesium vapor pressure around the substrates, we used a special…
In this work, we explore the ability of plasma assisted chemical vapor deposition (PACVD) operating under high power densities to produce thin high-quality diamond layers with a controlled doping with negatively-charged nitrogen-vacancy…
Acoustic emission is used here to study melting and solidification of embedded indium particles in the size range of 0.2 to 3 um in diameter and to show that dislocation generation occurs in the aluminum matrix to accommodate a 2.5% volume…
Compressed ultrafast photography (CUP) is applied to laser breakdown in argon and xenon under pressures up to 40atm to obtain 2D images of the plasma dynamics of single events with a spatial resolution of 250x100 pixels and an equivalent…
The article considers the simulation of the formation of a multilayer nanocomposite, the combination of elements of which gives rise to the effect of a spin valve. The relevance and importance of the effects in the field of spintronics and…
The material eroded from the surface of plasma facing components is redeposited partly close to high heat flux areas. At these locations, the deposit is heated by the plasma and the deposition pattern evolves depending on the operation…
In this work we explore surrogate models to optimize plasma enhanced atomic layer deposition (PEALD) in high aspect ratio features. In plasma-based processes such as PEALD and atomic layer etching, surface recombination can dominate the…
Tungsten (W) is the leading candidate material for plasma-facing components in fusion reactors, yet its upper operational temperature is limited by premature grain growth and recrystallization processes. Irradiation adds further…
Uncapped InN nanostructures undergo a deleterious natural aging process at ambient conditions by oxygen incorporation. The phases involved in this process and their localization is mapped by Transmission Electron Microscopy (TEM) related…
Abstract Applications of nitrogen-vacancy (NV) centers in diamond in quantum technology have attracted considerable attention in recent years. Deterministic generation of ensembles of NV centers can advance the research on quantum sensing,…
Peculiarities of formation of inclusions of amorphous Si (a-Si) phase in Si-rich Si oxynitride films grown by plasma-enhanced chemical vapor deposition (PECVD) are studied by combined Raman scattering and infrared (IR) absorption…
Orthorhombic II-IV nitride semiconductors offer an expanded and more tunable material set with unique properties, while maintaining close compatibility with the wurtzite crystal structure of the III-nitrides. In particular, MgSiN2, a II-IV…
The viability of ultrasonic sonochemistry is investigated in the context of delivering air-stable metallic Al rich-PVP composite. The parameters investigated are; sono-(1) process intensification, (2) crystallization, (3) agglomeration, and…