Related papers: A comparison of two different mechanisms for deter…
The control of antiferromagnets by magnetic fields represents a fundamental challenge in condensed matter physics, owing to their fully compensated magnetic order and vanishing net magnetization. Conventional methods rely on either…
An attractive feature of magnetic adatoms and molecules for nanoscale applications is their superparamagnetism, the preferred alignment of their spin along an easy axis preventing undesired spin reversal. The underlying magnetic anisotropy…
Using micromagnetics we demonstrate that the r.f. field produced by a spin valve can be used to reverse the magnetization in a magnetic nanoparticle. The r.f. field is generated using a current that specifically excites a uniform spin wave…
Recently, unconventional spin-orbit torques (SOTs) with tunable spin generation open new pathways for designing novel magnetization control for cutting-edge spintronics innovations. A leading research thrust is to develop field-free…
Synthetic antiferromagnets (SAF) have been proposed to replace ferromagnets in magnetic memory devices to reduce the stray field, increase the storage density and improve the thermal stability. Here we investigate the spin-orbit torque in a…
Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…
We demonstrate efficient current induced spin orbit torque switching in perpendicularly magnetized epitaxial MgO(001)//Pd/Co2FeAl/MgO heterostructures grown by magnetron sputtering. The advantage of such heterostructures for spin orbit…
Despite the potential advantages of information storage in antiferromagnetically coupled materials, it remains unclear whether one can control the magnetic moment orientation efficiently because of the cancelled magnetic moment. Here, we…
Energy-efficient switching of magnetization is a central problem in nonvolatile magnetic storage and magnetic neuromorphic computing. In the past two decades, several efficient methods of magnetic switching were demonstrated including spin…
Through systematics density functional calculations, the mechanism of the substrate induced spin reorientation transition in FePc/O-Cu(110) was explained in terms of charge transfer and rearrangement of Fe-d orbitals. Moreover, we found…
Magnetic anisotropy phenomena in bimetallic antiferromagnets Mn$_2$Au and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-parameter dependent magnetic anisotropies of the ground state…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
Spin-flop transition (SFT) consists in a jump-like reversal of antiferromagnetic magnetic moments into a non-collinear state when the magnetic field increases above the critical value. Potentially the SFT can be utilized in many…
We study magnetization reversal using various r.f. magnetic pulses. We show numerically that switching is possible with simple sinusoidal pulses; however the optimum approach is to use a frequency-swept (chirped) r.f. magnetic pulse, the…
The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…
A solution to energy-efficient magnetization switching in a nanoparticle with biaxial anisotropy is presented. Optimal control paths minimizing the energy cost of magnetization reversal are calculated numerically as functions of the…
One of the main obstacles that prevents practical applications of antiferromagnets is the difficulty of manipulating the magnetic order parameter. Recently, following the theoretical prediction [J. \v{Z}elezn\'y et al., PRL 113, 157201…
Voltage-driven spin transfer torques in magnetic tunnel junctions provide an outstanding tool to design advanced spin-based devices for memory and reprogrammable logic applications. The non-linear voltage dependence of the torque has a…
We use three-terminal magnetic tunnel junctions (MTJs) designed for field-free switching by spin-orbit torques (SOTs) to systematically study the impact of dual voltage pulses on the switching performances. We show that the concurrent…
It is shown that a pulsed current driven through Ni nanowires provokes an irreversible magnetization reversal at a field distant from the spontaneous switching field $H_{sw}$ by $\Delta H$ of as much as 40 % of $H_{sw}$. The state of the…