Related papers: Raman spectroscopy of GaSe and InSe post-transitio…
The spin-ladder compounds of the BaFe2X3 (X = chalcogen) family may be viewed as dimensional reductions (along stripe-like motifs) of the two-dimensional iron-based pnictide planes extensively studied since 2006. Remarkably, despite their…
The Raman response in a superconductor is a powerful probe to investigate the symmetry of the superconducting gap. Here we show that in a multiband superconductor it also offers the unique opportunity to establish if the driving pairing…
Emergent electronic phenomena in iron-based superconductors have been at the forefront of condensed matter physics for more than a decade. Much has been learned about the origin and intertwined roles of ordered phases, including nematicity,…
Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great…
We have investigated 3d electronic states of doped transition metals in II-VI diluted magnetic semiconductors, Zn1-xMxSe (M = Mn, Fe, Co) and Zn1-xMnxY (Y = Se, Te), using the transition-metal L2,3-edge X-ray absorption spectroscopy (XAS)…
Recent results on the optical properties of mono- and few-layers of semiconducting transition metal dichalcogenides are reviewed. Experimental observations are presented and discussed in the frame of existing models, highlighting the limits…
We investigate non-resonant Raman response for iron-based superconductors using the framework of an effective S4 model that was recently proposed to capture the essential electronic and magnetic properties of Iron based superconductors. We…
Raman spectroscopy has become an essential technique to characterize and investigate graphene and many other two-dimensional materials. However, there still lacks consensus on the Raman signature and phonon dispersion of atomically thin…
Transition metal dichalcogenides (TMDs) have recently attracted attention due to their interesting electronic and optical properties. Fabrication of these materials in a reliable and facile method is important for future applications, as…
Using density-functional theory, we calculate the electronic bandstructure of single-layer graphene on top of hexagonal In_2Te_2 monolayers. The geometric configuration with In and Te atoms at centers of carbon hexagons leads to a Kekule'…
We explore the many body physics of a Bose condensed atom gas at finite temperature through the Raman transition between two hyperfine levels. Unlike the Bragg scattering where the phonon-like nature of the collective excitations has been…
The vibrational spectroscopy of semiconductor nanostructures can provide important information on their structure. In this work, experimental Raman and infrared spectra are compared with vibrational spectra of CdSe/CdS core/shell…
GaGeTe is a layered topological semimetal that has been recently found to exist in at least two different polytypes, $\alpha$-GaGeTe ($R\bar{3}m$) and $\beta$-GaGeTe ($P6_3 mc$). Here we report a joint experimental and theoretical study of…
Research progress on single-layer group III monochalcogenides have been increasing rapidly owing to their interesting physics. Herein, we predict the dynamically stable single-layer forms of XBi (X=Ge, Si, or Sn) by using density functional…
We report crystal growth and Raman spectroscopy characterization of pure and mixed bulk topological insulators. The series comprises of both binary and ternary tetradymite topological insulators. We analyzed in detail the Raman peaks of…
We report on the behavior of Ge-Ge, Ge-Sn, Sn-Sn like and disorder-activated vibrational modes in GeSn semiconductors investigated using Raman scattering spectroscopy. By using an excitation wavelength close to E1 gap, all modes are clearly…
The FeSe-based superconductors exhibit a wide range of critical temperature Tc under a variety of material and physical conditions, but extensive studies to date have yet to produce a consensus view on the underlying mechanism. Here we…
The method of software analysis of high-resolution TEM images using the peak pairs algorithm in combination with Raman spectroscopy was employed to study lattice deformations in Ge/Si(001) structures with low-temperature Ge quantum dots. It…
We report on room-temperature Raman scattering measurements in few-layer crystals of exfoliated molybdenum ditelluride (MoTe$_{2}$) performed with the use of 632.8 nm (1.96 eV) laser light excitation. In agreement with recent study reported…
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are…