Related papers: Anisotropy in Antiferromagnets
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
Antiferromagnets that display very small stray magnetic field are ideal for spintronic applications. Of particular interest are non-collinear, chiral antiferromagnets of the type Mn3X (X=Sn, Ge), which display a large magnetotransport…
Envisaging antiferromagnetic spintronics pivots on two key criteria of high transition temperature and tuning of underlying magnetic order using straightforward application of magnetic field or electric current. Here, we show that NiSi…
Magnetic anisotropy is one of the important factors in determining magnetic structures. A type of magnetic anisotropy is closely related to the symmetry of crystals. We theoretically investigate magnetic anisotropy and its related magnetic…
Magnetic tunnel junction-based molecular spintronics devices (MTJMSDs) are designed by covalently connecting the paramagnetic molecules across two ferromagnets (FM) electrodes of a magnetic tunnel junction (MTJ). MTJMSD provides…
Temperature-dependent resistivity and magnetoresistance are measured in bulk tetragonal phase of antiferromagnetic CuMnAs and the latter is found to be anisotropic both due to structure and magnetic order. We compare these findings to model…
We report the thermodynamic properties studied by thermal expansion, magnetostriction, magnetisation, and specific heat measurements as well as the low-energy magnetic excitations of \mto\ and investigate how magneto-elastic coupling and…
Substantial amounts of the transition metals Mn, Fe, Co, and Ni can be substituted for Li in single crystalline Li$_2$(Li$_{1-x}T_x$)N. Isothermal and temperature-dependent magnetization measurements reveal local magnetic moments with…
Electronic and magnetic properties of the heavily H-doped LaFeAsO$_{1-x}$H$_x$ $(x\sim0.5 )$ were studied in the framework of the density functional theory combined with the dynamical mean field theory (DFT+DMFT). We found a…
Artificial multiferroics consist of two types of ferroic materials, typically a ferroelectric and ferromagnet, often coupled interfacially by magnetostriction induced by the lattice elongations in the ferroelectric. In BaTiO3 the magnitude…
We examine the optical conductivity in antiferromagnetic (AFM) iron pnictides by mean-field calculation in a five-band Hubbard model. The calculated spectra are well consistent with the in-plane anisotropy observed in the measurements,…
Field-induced antiferromagnetic (AF) fluctuations and magnetization are observed above the (zero-field) ordering temperature, T_N = 23 K by electron spin resonance in kappa-(BEDT-TTF)_2Cu[N(CN)_2]Cl, a quasi two-dimensional antiferromagnet…
We demonstrate how shape-induced strain can be used to control antiferromagnetic order in NiO/Pt thin films. For rectangular elements patterned along the easy and hard magnetocrystalline anisotropy axes of our film, we observe different…
The AFMR spectra of the NdFe$_3$(BO$_3$)$_4$ crystal are measured in a wide range of frequencies and temperatures. It is found that by the type of magnetic anisotropy the compound is an "easy-plane" antiferromagnet with a weak anisotropy in…
Antiferromagnetic transition metal oxides are an established and widely studied materials system in the context of spin-based electronics, commonly used as passive elements in exchange bias-based memory devices. Currently, major interest…
We report studies of exchange bias and coercivity in ferromagnetic Ni$_{81}$Fe$_{19}$ layers coupled to antiferromagnetic (AF) (0001), (11$\bar{2}$0), and (11$\bar{0}$2) $\alpha$-Fe$_2$O$_3$ layers. We show that AF spin configurations which…
Nematic orders emerge nearly universally in iron-based superconductors, but elucidating their origins is challenging because of intimate couplings between orbital and magnetic fluctuations. The iron-based ladder material BaFe2S3, which…
We analyze atom-surface magnetic interactions on atom chips where the magnetic trapping potentials are produced by current carrying wires made of electrically anisotropic materials. We discuss a theory for time dependent fluctuations of the…
FeTaN/TaN/FeTaN sandwich films, FeTaN/TaN and TaN/FeTaN bilayers were synthesized by using RF magnetron sputtering. The magnetic properties, crystalline structures, microstructures and surface morphologies of the as-deposited samples were…
We demonstrate a simple, low cost, magneto-transport method for rapidly characterizing the magnetic anisotropy and anisotropic magneto-resistance (AMR) of ferromagnetic devices with uniaxial magnetic anisotropy. This transport technique is…