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Related papers: Enhancement of Giant Rashba Splitting in BiTeI und…

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The search for strongly inversion asymmetric topological insulators is an active research field because these materials possess distinct properties compared with the inversion symmetric ones. In particular, it is desirable to realize a…

Materials Science · Physics 2014-01-28 Jin-Jian Zhou , Wanxiang Feng , Ying Zhang , Shengyuan A. Yang , Yugui Yao

The spin-orbit interaction affects the electronic structure of solids in various ways. Topological insulators are one example where the spin-orbit interaction leads the bulk bands to have a non-trivial topology, observable as gapless…

Materials Science · Physics 2012-02-15 M. S. Bahramy , B. -J. Yang , R. Arita , N. Nagaosa

Spin orbit interaction can be strongly boosted when a heavy element is embedded into an inversion asymmetric crystal field. A simple structure to realize this concept in a 2D crystal contains three atomic layers, a middle one built up from…

The presence of Rashba-like surface states (RSS) in the electronic structure of topological insulators (TIs) has been a longstanding topic of interest due to their significant impact on electronic and spin structures. In this study, we…

The non-centrosymmetric semiconductor BiTeI exhibits two distinct surface terminations that support spin-split Rashba surface states. Their ambipolarity can be exploited for creating spin-polarized $p$-$n$ junctions at the boundaries…

Mesoscale and Nanoscale Physics · Physics 2014-02-06 C. Tournier-Colletta , G. Autès , B. Kierren , Ph. Bugnon , H. Berger , Y. Fagot-Revurat , O. V. Yazyev , M. Grioni , D. Malterre

It was recently shown that BiTeI, a semiconductor with polar crystal structure, possesses a giant spin-splitting of electrons, which has been interpreted in terms of Rashba-type spin-orbit coupling. Here, we use high field magneto-optical…

Mesoscale and Nanoscale Physics · Physics 2019-10-16 S. Bordacs , M. Orlita , M. Sikula , H. Murakawa , Y. Tokura

The Rashba effect is one of the most striking manifestations of spin-orbit coupling in solids, and provides a cornerstone for the burgeoning field of semiconductor spintronics. It is typically assumed to manifest as a momentum-dependent…

The bulk Rashba semiconductors BiTeX (X=I, Cl and Br) with intrinsically enhanced Rashba spin-orbit coupling provide a new platform for investigation of spintronic and magnetic phenomena in materials. We theoretically investigate the…

Mesoscale and Nanoscale Physics · Physics 2019-07-17 Mahmoud M. Asmar , Wang-Kong Tse

Within density functional theory, we study bulk band structure and surface states of BiTeBr. We consider both ordered and disordered phases which differ in atomic order in the Te-Br sublattice. On the basis of relativistic ab-initio…

Materials Science · Physics 2013-11-25 S. V. Eremeev , I. P. Rusinov , I. A. Nechaev , E. V. Chulkov

In addition to the topologically protected linear dispersion, a band-bending-confined two-dimensional electron gas with tunable Rashba spin-splitting (RSS) was found to coexist with the topological surface states on the surface of…

We observe a giant spin-orbit splitting in bulk and surface states of the non-centrosymmetric semiconductor BiTeI. We show that the Fermi level can be placed in the valence or in the conduction band by controlling the surface termination.…

We study the magnetic susceptibility of a layered semiconductor BiTeI with giant Rashba spin splitting both theoretically and experimentally to explore its orbital magnetism. Apart from the core contributions, a large temperature-dependent…

Materials Science · Physics 2012-09-03 G. A. H. Schober , H. Murakawa , M. S. Bahramy , R. Arita , Y. Kaneko , Y. Tokura , N. Nagaosa

We performed temperature dependent infrared spectroscopy measurements on BiTeI single crystals, which exhibit large Rashba spin-splitting. Similar to a previous optical study, we found electronic excitations in good agreement with…

Materials Science · Physics 2012-09-11 C. Martin , K. H. Miller , S. Buvaev , H. Berger , X. S. Xu , A. F. Hebard , D. B. Tanner

In layered polar semiconductor BiTeI, giant Rashba-type spin-split band dispersions show up due to the crystal structure asymmetry and the strong spin-orbit interaction. Here we investigate the 3-dimensional (3D) bulk band structures of…

3D Rashba materials can be a leading player in spin-related novel phenomena, ranging from the metallic extreme (unconventional superconductivity) to the transport intermediate (spin Hall effects) to the novel insulating variant (3D…

Materials Science · Physics 2013-03-19 Manabu Kanou , Takao Sasagawa

Based on the ab initio calculations, we study the electronic structure of the BiTeI/MnBi2Te4 heterostructure interface composed of the anti-ferromagnetic topological insulator MnBi$_2$Te$_4$ and the polar semiconductor trilayer BiTeI. We…

Materials Science · Physics 2023-01-18 N. L. Zaitsev , I. P. Rusinov , T. V. Menshchikova , E. V. Chulkov

BiTeI is a polar semiconductor with strong spin-orbit coupling (SOC) that produces large Rashba spin splitting. Due to its potential utility in spintronics and magnetoelectrics, it is essential to understand how defects impact the spin…

We study the temperature dependence of the Rashba-split bands in the bismuth tellurohalides BiTe$X$ $(X=$ I, Br, Cl) from first principles. We find that increasing temperature reduces the Rashba splitting, with the largest effect observed…

Materials Science · Physics 2017-10-18 Bartomeu Monserrat , David Vanderbilt

Rashba spin splitting (RSS) in biased semiconductor quantum wells is investigated theoretically based on the eight-band envelope function model. We find that at large wave vectors, RSS is both nonmonotonic and anisotropic as a function of…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 Wen Yang , Kai Chang

We study the magneto-optical (MO) response of polar semiconductor BiTeI with giant bulk Rashba spin splitting at various carrier densities. Despite being non-magnetic, the material is found to yield a huge MO activity in the infrared region…

Strongly Correlated Electrons · Physics 2015-06-05 L. Demkó , G. A. H. Schober , V. Kocsis , M. S. Bahramy , H. Murakawa , J. S. Lee , I. Kézsmárki , R. Arita , N. Nagaosa , Y. Tokura
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