Related papers: Heat flux sensing by anomalous Nernst effect in Fe…
We present THz range optical conductivity data of a thin film of the near quantum critical heavy fermion compound CeFe$_2$Ge$_2$. Our complex conductivity measurements find a deviation from conventional Drude-like transport in a temperature…
Based on the Boltzmann transport theory, we study the origin of the anomalous temperature dependence of the Nernst coefficient ($\nu$) due to the phonon-drag mechanism. For narrow-gap semiconductors, we find that there are two…
We report a robust anomalous Nernst effect in Co2MnGa thin films in the thickness regime between 20 and 50 nm. The anomalous Nernst coefficient varied in the range of -2.0 to -3.0 uV/K at 300 K. We demonstrate that the anomalous Hall and…
Nernst effect, a transverse electric current induced by a temperature gradient, is a promising tool for revealing emergent phases of condensed matter. We find a Nernst coefficient plateau in low carrier density topological insulators, as a…
We investigate the unusual temperature dependence of the anomalous Hall effect in Ni. By varying the thickness of the MBE-grown Ni films, the longitudinal resistivity is uniquely tuned without resorting to doping impurities; consequently,…
Plasmonic near-field transducers (NFTs) play a key role in administering nanoscale heating for a number of applications ranging from medical devices to next generation data processing technology. We present a novel multi-scale approach,…
Adsorbed molecular films provide two-dimensional systems that show various emergent phenomena that are not observed in bulk counterparts. We have measured the elasticity of thin neon films adsorbed on porous glass down to 1 K by the…
The effect of vacuum annealing thin films of the compensated ferrimagnetic half-metal Mn2RuxGa at temperatures from 250 to 400 degree Celsius is investigated. The 39.3 nm films deposited on (100) MgO substrates exhibit perpendicular…
We have studied the physics of transition-edge sensor (TES) devices with an insulating AlOx layer on top of the device to allow implementation of more complex detector geometries. By comparing devices with and without the insulating film,…
Metallic amorphous ferrimagnets derived from alloying 3d transition metals with 4f electron rare earths host fascinating effects of compensation between the 3d and 4f magnetic sublattices. Here, a detailed study of anisotropic…
This study reports the observation of the large anomalous Nernst effect in polycrystalline ferromagnetic Co$_{2}$MnGa (CMG) slabs prepared by a spark plasma sintering method. By optimizing the sintering conditions, the anomalous Nernst…
Ferromagnetic metallic oxides have potential applications in spincaloric devices which utilize the spin property of charge carriers for interconversion of heat and electricity through the spin Seebeck or the anomalous Nernst effect or both.…
In amorphous superconducting thin films of $Nb_{0.15}Si_{0.85}$ and $InO_x$, a finite Nernst coefficient can be detected in a wide range of temperature and magnetic field. Due to the negligible contribution of normal quasi-particles,…
The purpose of this study was to investigate the magnetotransport properties of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic…
The planar Hall sensitivity of obliquely deposited NiFe(10)/Pt(tPt) /IrMn(8)/Pt(3) (nm) trilayer structures has been investigated by introducing interfacial modification and altering sensor geometry. The peak-to-peak PHE voltage and AMR…
We report on an optimized micro-machined thermal flow-rate sensor as part of an autonomous multi-parameter sensing device for water network monitoring. The sensor has been optimized under the following constraints: low power consumption and…
Magnon-drag is shown to dominate the thermopower of elemental Fe from 2 to 80 K and of elemental Co from 150 to 600 K; it is also shown to contribute to the thermopower of elemental Ni from 50 to 500 K. Two theoretical models are presented…
Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…
The transfer of heat between electrons and phonons plays a key role for thermal management in future nanowire-based devices, but only a few experimental measurements of electron-phonon (e-ph) coupling in nanowires are available. Here, we…
AlN is an ultra-wide bandgap semiconductor which has been developed for applications including power electronics and optoelectronics. Thermal management of these applications is the key for stable device performance and allowing for long…