Related papers: Mesoscopic Elastic Distortions in GaAs Quantum Dot…
This paper focuses on the homogenization of high-contrast dielectric elastomer composites, materials that deform in response to electrical stimulation. The considered heterogeneous material consisting of an ambient material with inserted…
A rectangular plate of dielectric elastomer exhibiting gradients of material properties through its thickness will deform inhomogeneously when a potential difference is applied to compliant electrodes on its major surfaces, because each…
We have combined direct nanofabrication by local anodic oxidation with conventional electron-beam lithography to produce a parallel double quantum dot based on a GaAs/AlGaAs heterostructure. The combination of both nanolithography methods…
The effects of long-range anisotropic elastic deformations on electronic structure in superconductors are analyzed within the framework of the Bogoliubov-de Gennes equations. Cases of twin boundaries and isolated defects are considered as…
Considering the increasing number of experimental results in the manufacturing process of quantum dots with different geometries, and the fact that most numerical methods that can be used to investigate quantum dots with non-trivial…
In recent years, advancements in semiconductor manufacturing technology have enabled the formation of high-quality, high-mobility two-dimensional electron gases in zinc oxide (ZnO) heterostructures, making the electrostatic formation of…
Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for \revEdit{their} potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe…
We report on the fabrication and characterization of patterned high-mobility two-dimensional electron gases (2DEG) formed on SrTiO$_3$ (STO) substrate surfaces by hydrogen plasma exposure. The resulting devices consistently showed high…
Self-assembled quantum dot (QD) solids are a highly tunable class of materials with a wide range of applications in solid-state electronics and optoelectronic devices. In this perspective, we highlight how the presence of microscopic…
The interrelationship between a material's structure and its properties lies at the heart of materials-related research. Finding how the changes of one affect the other is of primary importance in theoretical and computational materials…
A serial triple quantum dot (TQD) electrostatically defined in a GaAs/AlGaAs heterostructure is characterized by using a nearby quantum point contact as charge detector. Ground state stability diagrams demonstrate control in the regime of…
Dilute arrays of GaAs/AlGaAs modulation-doped quantum dots (QDs) fabricated by electron-beam lithography and low impact reactive-ion etching exhibit highly homogeneous luminescence. Single quantum dots display spectral emission with peak…
Semiconductor nanostructures based on two dimensional electron gases (2DEGs) have the potential to provide new approaches to sensing, information processing, and quantum computation. Much is known about electron transport in 2DEG…
The optical properties of excitons confined in initially-unstrained GaAs/AlGaAs quantum dots are studied as a function of a variable quasi-uniaxial stress. To allow the validation of state-of-the-art computational tools for describing the…
A highly conductive metallic gas that is quantum mechanically confined at a solid-state interface is an ideal platform to explore nontrivial electronic states that are otherwise inaccessible in bulk materials. Although two-dimensional…
Nonradiative processes limit optoelectronic functionality of nanocrystals and curb their device performance. Nevertheless, the dynamic structural origins of nonradiative relaxations in nanocrystals are not understood. Here, femtosecond…
Nonequilibrium states of quantum materials can exhibit exotic properties and enable unprecedented functionality and applications. These transient states are inherently inhomogeneous, characterized by the formation of topologically protected…
Fundamental interest for 2D electron gas (2DEG) systems has been recently renewed with the advent of 2D materials and their potential high-impact applications in optoelectronics. Here, we investigate a 2DEG created by the electron transfer…
Tunneling excitations of electrons in dry-etched modulation-doped AlGaAs/GaAs coupled quantum dots (QDs) are probed by resonant inelastic light scattering. A sequence of intra- and intershell excitations are found at energies determined by…
Self-assembled semiconductor quantum dot is a new type of artificially designed and grown function material which exhibits quantum size effect, quantum interference effect, surface effect, quantum tunneling-Coulumb-blockade effect and…