Related papers: Large anomalous Hall effect in a hexagonal ferroma…
By performing first principles calculations we investigate the intrinsic anomalous Hall conductivity (AHC) and its anisotropy in ordered L1o FePt, CoPt and NiPt ferromagnets, and their intermediate alloys. We demonstrate that the AHC in…
The temperature dependence of the Hall coefficient of a series of ferromagnetic Ga(1-x)Mn(x)As samples is measured in the temperature range 80K < T < 500K. We model the Hall coefficient assuming a magnetic susceptibility given by the…
We investigate ultrafast dynamics of the anomalous Hall effect (AHE) in the topological antiferromagnet Mn3Sn with sub-100 fs time resolution. Optical pulse excitations largely elevate the electron temperature up to 700 K, and terahertz…
The recent advent of topological states of matter spawned many significant discoveries. The quantum anomalous Hall effect[1-3] is a prime example due to its potential for applications in quantum metrology[4, 5] as well as its influence on…
In transition-metal-oxide heterostructures, the anomalous Hall effect (AHE) is a powerful tool for detecting the magnetic state and revealing intriguing interfacial magnetic orderings. However, achieving a larger AHE at room temperature in…
The transverse thermoelectric effect enables simpler, more flexible thermoelectric devices by generating electricity perpendicular to heat flow, offering promising solutions for waste heat recovery and solid-state cooling applications.…
The relativistic nature of the electron motion underlies the intrinsic part of the anomalous Hall effect, believed to dominate in ferromagnetic (Ga,Mn)As. In this paper, we concentrate on the crystal band structure as an important facet to…
The Hall effect in InMnAs layers with MnAs inclusions of 20-50 nm in size is studied both theoretically and experimentally. We find that the anomalous Hall effect can be explained by the Lorentz force caused by the magnetic field of…
Topologically nontrivial electronic states can give rise to novel anomalous Hall effects. The potential appearance of these effects at room temperature holds promise for their application in magnetic sensing, spintronics, and energy…
A scaling relation of the anomalous Hall effect recently found in a ferromagnetic semiconductor (Ti,Co)O_2_ is compared with those of various ferromagnetic semiconductors and metals. Many of these compounds with relatively low conductivity…
A layered ferromagnet Cr$_2$Te$_3$ is attracting growing interest because of its unique electronic and magnetic properties. Studies have shown that it exhibits sizable anomalous Hall effect (AHE) that changes sign with temperature. The…
The magnetotransport properties of disordered ferromagnetic kagome layers are investigated numerically. We show that a large domain-wall magnetoresistance or negative magnetoresistance can be realized in kagome layered materials (e.g.…
As in conventional ferromagnets, the Hall resistivity rho_xy of a La_{2/3}(Ca,Pb)_{1/3}MnO_3 single crystal exhibits both ordinary and anomalous contributions at low temperature. However, these contributions, unexpectedly, have opposite…
Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in…
The anomalous Hall effect (AHE) is a topology-related transport phenomenon being of potential interest in spintronics, because this effect enables the efficient probe of magnetic orders (i.e., data readout in memory devices). It is well…
Most canted antiferromagnets are also anomalous Hall antiferromagnets (AHE AFMs), i.e. they have an anomalous Hall response and other responses with the same symmetry requirements. We suggest that AHE AFMs are promising materials as hosts…
The high Chern-number quantum anomalous Hall effect (QAHE) is significant and fascinating due to the presence of multiple dissipationless chiral edge states. Here, we predict that monolayer NiSbO3 possesses the Chern number C = 3, confirmed…
We determine the composition of intrinsic as well as extrinsic contributions to the anomalous Hall effect (AHE) in the isoelectronic L1o FePd and FePt alloys. We show that the AHE signal in our 30 nm thick epitaxially deposited films of…
Inspired by the observation of the extremely large anomalous Hall effect in the absence of applied magnetic fields or uniform magnetization in CoNb$_3$S$_6$ [Nature Comm. 9, 3280 (2018); Phys. Rev. Research 2, 023051 (2020)], we perform a…
We show that the Anomalous Hall Effect (AHE) observed in Colossal Magnetoresistance Manganites is a manifestation of Berry phase effects caused by carrier hopping in a non-trivial spin background. We determine the magnitude and temperature…