Related papers: Determination of spin-orbit torque efficiencies in…
Despite recent advances in orbitronics, generating out-of-plane orbital torques essential for field-free deterministic switching of perpendicular magnetization remains a key challenge. Here, we propose a strategy to produce such…
Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents,…
The combination of spin-orbit coupling driven effects and multiferroic tunneling properties was explored experimentally in thin Pt/Co/BTO/LSMO multilayers. The presence of a Pt heavy metal allows for the spin current-induced magnetization…
Spin-orbit coupling and breaking of inversion symmetry are necessary ingredients to enable a pure spin current-based manipulation of the magnetization via the spin-orbit torque effect. Currently, magnetic insulator oxides with…
A study of dynamic and reversible voltage controlled magnetization switching in ferromagnetic Co/Pt thin film with perpendicular magnetic anisotropy at room temperature is presented. The change in the magnetic properties of the system is…
Spin-orbit torques induced by spin Hall and interfacial effects in heavy metal/ferromagnetic bilayers allow for a switching geometry based on in-plane current injection. Using this geometry, we demonstrate deterministic magnetization…
When charge current passes through a normal metal that exhibits spin Hall effect, spin accumulates at the edge of the sample in the transverse direction. We predict that this spin accumulation, or spin voltage, enables quantum tunneling of…
Orthoferrites ($RE$FeO$_{3}$) containing rare-earth ($RE$) elements are 3D antiferromagnets (AFM) that exhibit characteristic weak ferromagnetism originating due to slight canting of the spin moments and display a rich variety of spin…
We present a theory of the spin Hall magnetoresistance of metals in contact with magnetic insulators. We express the spin-mixing conductances, which govern the phenomenology of the effect, in terms of the microscopic parameters of the…
We present a new mechanism for a spin blockade effect associated with a change in the type of magnetic anisotropy over oxidation state in a single molecule transistor, by taking an example of an individual Eu$_{2}$(C$_{8}$H$_{8}$)$_{3}$…
We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal…
We present a theory of the spin Hall magnetoresistance (SMR) in multilayers made from an insulating ferromagnet F, such as yttrium iron garnet (YIG), and a normal metal N with spin-orbit interactions, such as platinum (Pt). The SMR is…
We present a novel method for measuring the modulation of magnetic anisotropy and the strength of spin-orbit interaction by an electrical current in nanomagnets. Our systematic study explores the current dependencies of these properties…
We propose a magnetization reversal model to explain the perpendicular switching of a single ferromagnetic layer induced by an in-plane current. Contrary to previously proposed reversal mechanisms that such magnetic switching is directly…
We show that direct current in a tantalum microstrip can induce steady-state magnetic oscillations in an adjacent nanomagnet through spin torque from the spin Hall effect (SHE). The oscillations are detected electrically via a magnetic…
A theoretical formula is derived for the threshold current to switch a perpendicular magnetization in a ferromagnet by the spin Hall effect. The numerical simulation of the Landau-Lifshitz-Gilbert equation indicates that magnetization…
The ability to switch magnetic elements by spin-orbit-induced torques has recently attracted much attention for a path towards high-performance, non-volatile memories with low power consumption. Realizing efficient spin-orbit-based…
The resistance of a heavy metal can be modulated by an adjacent magnetic material through the combined effects of the spin Hall effect, inverse spin Hall effect, and dissipation of the spin accumulation at the interface. This phenomenon is…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods…
Recently, MnTe was established as an altermagnetic material that hosts spin-polarized electronic bands as well as anomalous transport effects like the anomalous Hall effect. In addition to these effects arising from altermagnetism, MnTe…