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We report an experimental noise study of intermediate sized quasi ballistic semiconducting multiwalled carbon nanotube (IS-MWCNT) devices. The noise is two orders of magnitude lower than in singlewalled nanotubes (SWCNTs) and has no length…
A single Nitrogen Vacancy (NV) center hosted in a diamond nanocrystal is positioned at the extremity of a SiC nanowire. This novel hybrid system couples the degrees of freedom of two radically different systems, i.e. a nanomechanical…
Carbon nanotube field-effect transistor (CNTFET) refers to a field-effect transistor that utilizes a single carbon nanotube or an array of carbon nanotubes as the channel material instead of bulk silicon in the traditional MOSFET structure.…
A nanoscale device consisting of a metal nanowire, a dielectric, and a gate is proposed. A combination of quantum and thermal stochastic effects enable the device to have multiple functionalities, serving alternately as a transistor, a…
NWQ-Sim is a cutting-edge quantum system simulation environment designed to run on classical multi-node, multi-CPU/GPU heterogeneous HPC systems. In this work, we provide a brief overview of NWQ-Sim and its implementation in simulating…
In this letter we propose the design and simulation study of a novel transistor, called HFinFET, which is a hybrid of a HEMT and a FinFET, to obtain excellent performance and good off state control. Followed by the description of the…
In this paper, we have experimentally demonstrated, for the first time, III-V 4D transistors with vertically stacked InGaAs nanowire (NW) channels and gate-all-around (GAA) architecture. Novel process technology enabling the transition from…
The electronic breakdown and the bias dependence of the conductance have been investigated for a large number of catalytic chemical vapor deposition (CCVD) grown single-walled carbon nanotubes (SWCNTs) with very small diameters. The…
A nanoscale variable resistor consisting of a metal nanowire (active element), a dielectric, and a gate, is proposed. By means of the gate voltage, stochastic transitions between different conducting states of the nanowire can be induced,…
We present a simple and scalable technique for the fabrication of solution processed & local gated carbon nanotube field effect transistors (CNT-FETs). The approach is based on directed assembly of individual single wall carbon nanotube…
Spiking neural networks (SNNs) that enable low-power design on edge devices have recently attracted significant research. However, the temporal characteristic of SNNs causes high latency, high bandwidth and high energy consumption for the…
We analyze the nonlinear voltage dependence of elelctrochemical capacitance for nano-scale conductors. This voltage dependence is due to finite density of states of the conductors. We derive an exact expression for the electrochemical…
In this paper, I present SEMIDV - a compact semiconductor device simulator incorporating quantum effects. SEMIDV solves the Poisson-Drift-Diffusion equations for semiconductor devices and provides a user-friendly Python interface for…
Carbon nanotube field-effect transistors (CNT FETs) are regarded as promising candidates for next-generation energy-efficient computing systems. While research has employed the lift-off process to demonstrate the performance of CNT FETs,…
Complementary metal oxide semiconductor technology (CMOS) has been faced critical challenges in nano-scale regime. CNTFET (Carbon Nanotube Field effect transistor) technology is a promising alternative for CMOS technology. In this paper, we…
Wireless Network-on-Chip (WNoC) systems, which wirelessly interconnect the chips of a computing system, have been proposed as a complement to existing chip-to-chip wired links. However, their feasibility depends on the availability of…
We use scanning photocurrent microscopy (SPCM) to investigate the properties of internal p-n junctions as well as local defects in ambipolar carbon nanotube (CNT) transistors. Our SPCM images show strong signals near metal contacts whose…
Speed is a major concern for high density VLSI networks. In this paper the closed form delay model for current mode signalling in VLSI interconnects has been proposed with resistive load termination. RLC interconnect line is modelled using…
Microscopic studies of superconductors and their vortices play a pivotal role in our understanding of the mechanisms underlying superconductivity. Local measurements of penetration depths or magnetic stray-fields enable access to…
We report low-temperature electrical transport studies of molecule-scale silicon nanowires. Individual nanowires exhibit well-defined Coulomb blockade oscillations characteristic of charge addition to a single nanostructure with length…