Related papers: New method for determining avalanche breakdown vol…
The results of a 1-D Monte-Carlo program, which simulates the avalanche multiplication in diodes with depths of the order of 1 $\mu$m based on the method proposed in Ref.1, are presented. The aim of the study is to achieve a deeper…
Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the…
The breakdown behaviour of SiPMs (Silicon PhotoMultiplier) with pixel sizes of 15$\times $15, 25$\times $25, 50$\times $50, and 100$\times $100 $\mu $m$^2$, manufactured by KETEK, has been investigated. From the current-voltage…
PIXELATED geiger-mode avalanche photodiodes(PPDs), often called silicon photomultipliers (SiPMs) are emerging as an excellent replacement for traditional photomultiplier tubes (PMTs) in a variety of detectors, especially those for subatomic…
In this paper I want to review the current status of development of multi-pixel silicon-based avalanche photo-diodes operated in Geiger mode, also known as Silicon Photomultipliers (SiPM). Particular emphasis is given to the application of…
Accurate characterization of quantum yield is crucial to the reconstruction of energy depositions in silicon at the eV scale. This work presents a new method for experimentally calculating quantum yield using vacuum UV-sensitive silicon…
It is well known that avalanche photodiodes operated in the Geiger mode above the breakdown voltage offer a virtually infinite sensitivity and time accuracy in the picosecond range that can be used for single photon detection. However,…
The search for light dark matter and cosmic primordial neutrinos necessitates detectors with sub-millielectronvolt (sub-meV) energy thresholds. While superconducting quantum sensors have approached this sensitivity, they often face…
This work illustrates and compares some methods to measure the most relevant parameters of silicon photo-multipliers (\sipm{}s), such as photon detection efficiency as a function of over-voltage and wavelength, dark count rate, optical…
A new method to determine the breakdown voltage of SiPMs is presented. It is backed up by a DC model which describes the breakdown phenomenon by distinct avalanche turn-on ($V_{01}$) and turn off ($V_{10}$) voltages. It is shown that…
We present characterization results of two silicon photomultipliers; the Hamamatsu LVR-6050-CN and the Ketek PM3325 WB. With our measurements of the bias dependence of the breakdown probability we are able to draw conclusions about the…
The photon detection efficiencies of multi-pixel Geiger-mode avalanche photodiodes manufactured by different produ cers are estimated. A new fit method of the response spectra to low-intensity light, taking into ac count after-pulse and…
Miller formula modified to take into account voltage drop on serial resistor of an avalanche photodiode is considered. It is proven by experimental data that modified Miller formula can describe operation of both regular and micropixel…
Silicon Photomultipliers (SiPMs) have been widely adopted for photon detection in next-generation dark matter and neutrino detection experiments. Internal crosstalk, resulting from secondary photons produced during charge avalanches, is a…
Large-area next-generation physics experiments rely on using Silicon Photo-Multiplier (SiPM) devices to detect single photons, which trigger charge avalanches. The noise mechanism of external cross-talk occurs when secondary photons…
Avalanche photodiodes (APDs) are the semiconducting analogue of photomultiplier tubes offering very high internal current gain and fast response. APDs are interesting for a wide range of applications in communications1, laser ranging2,…
Silicon avalanche photodiodes are the most sensitive photodetectors in the visible to near infrared region. However, when they are used for single photon detection in a Geiger mode, they are known to emit light on the controlled breakdown…
New pixel geometries are on the rise to achieve high sensitivity in near-infrared wavelengths with silicon photomultipliers (SiPMs). We test prototypes of the tip avalanche photo-diodes, which feature a quasi-spherical p-n junction and a…
We present a versatile analytic model describing Photon Detection Efficiency (PDE) for P-on-N silicon photomultipliers, with possible applications for device characterization, PDE extrapolation from limited data, simulation and design…
Sensitive avalanche photodetectors (APDs) that operate within the ultraviolet spectrum are critically required for applications in detecting fire and deep-space exploration. However, the development of such devices faces significant…