Related papers: Degenerate doping in \b{eta}-Ga2O3 Single Crystals…

This work reports the demonstration of ALD-deposited NiO/\b{eta}-Ga2O3 heterojunction diodes (HJDs) on low doped drift layer and highly doped (001) & (100) n+ substrates with experimental observation of a parallel-plane junction electric…

We report on low-temperature MOVPE growth of silicon delta-doped \b{eta}-Ga2O3 films with low FWHM. The as-grown films are characterized using Secondary-ion mass spectroscopy, Capacitance-Voltage and Hall techniques. SIMS measurements show…

Polarisation doping of Al$_x$Ga$_{1-x}$N, through grading of $x$, has realised major improvements in $p$-type conductivity in ultraviolet (UV) light-emitting diodes (LEDs) compared to conventional impurity doping. However, the exact balance…

Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of…

Recent reports reveal that isothermal chemical doping of hydrogen in correlated complex oxides such as perovskite nickelates (e.g. NdNiO3) can induce a metal-to-insulator transition (MIT) without the need for temperature modulation. In this…

We report on silicon delta doping of metalorganic vapor-phase epitaxy-grown \b{eta}-Ga2O3 thin films using silane precursor. Delta-doped \b{eta}-Ga2O3 epitaxial films are characterized using capacitance-voltage profiling and secondary-ion…

We study magnetotransport in a rare earth doped topological insulator, Sm0.1Sb1.9Te3 single crystals, under magnetic fields up to 14 T. It is found that that the crystals exhibit Shubnikov de Haas oscillations in their magneto-transport…

The in-plane London penetration depth, $\Delta\lambda(T)$, was measured using a tunnel diode resonator in single crystals of Ba$_{1-x}$K$_x$Fe$_2$As$_2$ for five doping levels $x$ ranging from underdoped, $T_c$=11 K ($x$=0.17), to optimally…

Topological insulators are a new class of insulators with conducting surface state. Most of the topological insulators are chalcogenides, where a tiny amount of chalcogen vacancy destroys the predicted bulk insulating state and results in a…

We report the optical and dielectric properties in hafnium (Hf)-doped lithium niobate (LN) crystals. We investigated samples of congruent composition with various doping concentration varying from 0 to 8 mol%. The clamped and unclamped…

Metal heteroatoms dispersed in nitrogen-doped graphene display promising catalytic activity for fuel cell reactions such as the hydrogen evolution reaction (HER). Here we explore the effects of dopant concentration on the synergistic…

The isotropic average conduction band minimum electron effective mass in Sn-doped monoclinic single crystal $\beta$-Ga$_2$O$_3$ is experimentally determined by mid-infrared optical Hall effect to be $(0.284\pm0.013)m_{0}$ combining…

The effects of hydrogen incorporation into beta-Ga2O3 thin films have been investigated by chemical, electrical and optical characterization techniques. Hydrogen incorporation was achieved by remote plasma doping without any structural…

Monolayer epitaxial graphene (EG) grown on hexagonal Si-terminated SiC substrates is intrinsically electron-doped (carrier density is about 10^13 cm^(-2)). We demonstrate a clean device fabrication process using a precious-metal protective…

Neutron diffraction and magnetic susceptibility studies of orthorhombic single crystal {\Ksub} confirm the three dimensional (3D) C-type antiferromagnetic (AFM) ordering of the Mn$^{2+}$ moments at $T_{\rm N}=305 \pm 3$ K which is slightly…

A modulation-doping approach to control the carrier density of the high-density electron gas at a prototype polar/non-polar oxide interface is presented. It is shown that the carrier density of the electron gas at a GdTiO3/SrTiO3 interface…

Tunneling measurements are performed on Ca-rich single crystals of Bi2Sr2CaCu2O8+d (Bi2212), with various oxygen doping levels, using a novel point contact method. At 4.2 K, SIN and SIS tunnel junctions are obtained with well-defined…

Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however…

In this report, we show the results of the STM/STS study on the Bi2223 single crystals whose doping levels were ranging from an optimally doped to an underdoped region. Bi2223 single crystals were grown by a TSFZ method and their doping…

Hall effect and magnetoresistance have been measured on single crystals of $NdFeAsO_{1-x}F_{x}$ with x = 0 ($T_c$ = 0 $ $K) and x = 0.18 ($T_c$ = 50 $ $K). For the undoped samples, strong Hall effect and magnetoresistance with strong…