Related papers: Bunch width versus macrostep height: A quantitativ…
This work provides a ground for a quantitative interpretation of experiments on step bunching during sublimation of crystals with a pronounced Ehrlich-Schwoebel (ES) barrier in the regime of weak desorption. A strong step bunching…
By taking account of the alternation of structural parameters, we study bunching of impermeable steps induced by drift of adatoms on a vicinal face of Si(001). With the alternation of diffusion coefficient, the step bunching occurs…
We devise a new 1D atomistic scale model of vicinal growth based on Cellular Automaton. In it the step motion is realized by executing the automaton rule prescribing how adatoms incorporate into the vicinal crystal. Time increases after…
We study a minimal stochastic model of step bunching during growth on a one-dimensional vicinal surface. The formation of bunches is controlled by the preferential attachment of atoms to descending steps (inverse Ehrlich-Schwoebel effect)…
We formulate a new (1+1)D step model of potentially unstable vicinal growth that we call "C+ - C-" model and study the step bunching process in it. The basic assumption is that the equilibrium adatom concentrations on both sides of the step…
The classification of bunching of straight steps on vicinal crystal surfaces identifies two types according to the behavior of the minimal step-step distance in the bunch lmin with increasing the number of steps N in it. In the B1-type lmin…
By carrying out Monte Carlo simulations,we study step bunching during solution growth. For simplicity, we consider a square lattice, which represents a diffusion field in a solution, and express the diffusion of atoms as the hopping of…
We report numerical results for two models of vicinal motion. The first, LW, aims at crystal evaporation when the detachment from steps is slow [Liu and Weeks, PRB 57, 23 (1998) 14891]. The source of destabilization is electromigration…
We report for the first time the observation of bunching of monoatomic steps on vicinal W(110) surfaces induced by step up or step down currents across the steps. Measurements reveal that the size scaling exponent {\gamma}, connecting the…
Epitaxial growth on a surface vicinal to a high-symmetry crystallographic plane occurs through the propagation of atomic steps, a process called step-flow growth. In some instances, the steps tend to form close groups (or bunches), a…
We study the evolution of step bunches on vicinal surfaces using a thermodynamically consistent step-flow model that (i) circumvents the quasistatic approximation that prevails in the literature by accounting for the dynamics of adatom…
The growth of a crystal is usually determined by its surface. Many factors influence the growth dynamics. Energy barriers associated with the presence of steps most often decide about the emerging pattern. The height and type of…
We study the effect of two-dimensionality on step bunching induced by drift of adatoms. When anisotropy of the diffusion coefficient changes alternately on consecutive terraces like a Si(001) vicinal face, bunching occurs with the drift of…
We study further the recently introduced [Ranguelov et al., Comptes Rendus de l'Acad. Bulg. des Sci. 60, 4 (2007) 389] "C+-C-" model of step flow crystal growth over wide range of model parameters. The basic assumption of the model is that…
Step pattern stability of the vicinal surfaces during growth was analyzed using various surface kinetic models. It was shown that standard analysis of the vicinal surfaces provides no indication on the possible step coalescence and…
This work examined the effect of macrostep height on the growth velocity of a vicinal surface during reaction- (interface-) limited crystal growth under non-equilibrium steady state conditions. The Monte Carlo method was employed, based on…
We study step bunching under conditions of attachment/detachment limited kinetics in the presence of a deposition or sublimation flux, which leads to bunch motion. Analysis of the discrete step dynamics reveals that the bunch velocity is…
A sublimating vicinal crystal surface can undergo a step bunching instability when the attachment-detachment kinetics is asymmetric, in the sense of a normal Ehrlich-Schwoebel effect. Here we investigate this instability in a model that…
Bunching and meandering instability of steps at the 4H-SiC(0001) surface is studied by the kinetic Monte Carlo simulation method. Change in the character of step instability is analyzed for different rates of particle jumps towards step. In…
We introduce two hybrid models of step bunching on vicinal crystal surfaces. The model equations for step velocity are constructed by the two possible exchanges of terms between the equations of two primary models MM2 and LW2…