Related papers: Boosting room temperature magneto-ionics in Co3O4
Cerium-doped manganite thin films were grown epitaxially by pulsed laser deposition at $720 ^\circ$C and oxygen pressure $p_{O_2}=1-25 $Pa and were subjected to different annealing steps. According to x-ray diffraction (XRD) data, the…
A variety of novel phenomena and functionalities emerge from lowering the dimensionality of materials and enriching the degrees of freedom in modulation. In this work, it is found that the saturation magnetization of LaMnO3 (LMO) films is…
A remarkable decrease of the structural transition temperature of MnNiSi from 1200 K to <300 K by chemically alloying it with MnFeGe results in a coupling of the magnetic and structural transitions, leading to a large magnetocaloric effect…
Magnetoelectric (ME) effect is recognized for its utility for low-power electronic devices.Largest ME coefficients are often associated with phase transitions in which ferroelectricity is induced by magnetic order. Unfortunately, in these…
Magnetically induced ferroelectrics in multiferroics provide an optimal approach to pursuit intrinsically strong magnetoelectricity. However, the complex antiferromagnetism, faint magnetically induced polarization, and low working…
We combine two first-principles computer simulation techniques, path integral Monte-Carlo and density functional theory molecular dynamics, to determine the equation of state of magnesium oxide in the regime of warm dense matter, with…
We have investigated the field-induced superconductivity-destroying quantum transition in amorphous indium oxide films at low temperatures down to 30 mK. It has been found that, on the high-field side of the transition, the…
We study the controlled introduction of defects in GaMnAs by irradiating the samples with energetic ion beams, which modify the magnetic properties of the DMS. Our study focuses on the low-carrier-density regime, starting with as-grown…
Magnetoelectric mutual control in multiferroics, which is the electric control of magnetization, or reciprocally the magnetic control of polarization has attracted much attention because of its possible applications to spintronic devices,…
The technological conditions of oxygen content variation in epitaxial La0.7Sr0.3MnO3-{\delta} films and the peculiarities of change of their transport characteristics were investigated. The films were grown onto single crystal SrTiO3…
In spite of being highly relevant for the development of a new generation of information storage devices, not many single-phase materials displaying magnetic and ferroelectric orders above room temperature are known. Moreover, these…
We report on the electric field control of magnetic phase transition temperatures in multiferroic Ni3V2O8 thin films. Using magnetization measurements, we find that the phase transition temperature to the canted antiferromagnetic state is…
The magneto-optical activity of high quality transparent thin films of insulating EuTiO3 (ETO) deposited on a thin SrTiO3 (STO) substrate with both being non-magnetic materials are demonstrated to be a versatile tool for light modulation.…
The magnetoresistance (MR) effect is widely employed in technologies that pervade our world from magnetic reading heads to sensors. Diverse contributions to MR, such as anisotropic, giant, tunnel, colossal, and spin-Hall, are revealed in…
An emerging branch of electronics, the optospintronics, would be highly boosted if the control of magnetic order by light is implemented in magnetic semiconductors nanostructures being compatible with the actual technology. Here we show…
Thin films of magnetite (Fe3O4) are grown on single crystal GaAs (100) substrate by pulsed laser deposition. X ray diffraction (XRD) result shows the (111) preferred orientation of the Fe3O4 film and x-ray photoelectron spectroscopy confirm…
We report the temperature and magnetic field dependence of transport properties in epitaxial films of the manganite La$_{1-x}$Ca$_{x}$MnO$_{3}$ in the overdoped region of the phase diagram for $x > 0.5$, where a charge--ordered (CO) and an…
Ion irradiation of semiconductors is a well understood method to tune the carrier concentration in a controlled manner. We show that the ferromagnetism in GaMnAs films, known to be hole-mediated, can be modified by He ion irradiation. The…
The influence of an external static magnetic field (up to 480 mT)on the structural properties of EuTiO$_3$ (ETO) polycrystalline samples was examined by powder XRD at the Elettra synchrotron facilities in the temperature range 100-300K.…
Two-dimensional magnets could potentially revolutionize information technology, but their potential application to cooling technology and magnetocaloric effect (MCE) in a material down to the monolayer limit remain unexplored. Herein, we…