Related papers: 3C-SiC grown on Si by using a Si$_{1-x}$Ge$_x$ buf…

We examined, in backward (reflection) geometry, the generation of the 3rd and 5th harmonics, located in the deep and vacuum ultraviolet, on the surface of silicon and on the interface between silicon and silica when a thin silica film was…

The tunability of the chemical potential for a wide range encompassing the Dirac point is important for many future devices based on topological insulators. Here we report a method to fabricate highly efficient top gates on epitaxially…

Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include…

SiC is a promising substrate for Si-on-insulator (SOI) wafers for efficient thermal management owing to its high thermal conductivity and large bandgap. However, fabricating a Si device layer on a SiC substrate with a high and uniform…

We study the chemical ordering in Bi$_2$Te$_{3-x}$Se$_x$ grown by molecular beam epitaxy on Si substrates. We produce films in the full composition range from x = 0 to 3, and determine their material properties using energy dispersive X-ray…

Rare-earth ions (REI) have emerged as an attractive candidate for solid-state qubits, particularly as a quantum memory. Their 4f-4f transitions are shielded by filled 5s and 5p orbitals, offering a degree of protection from external…

Topological insulators are materials with an insulating bulk interior while maintaining gapless boundary states against back scattering. Bi$_2$Se$_3$ is a prototypical topological insulator with a Dirac-cone surface state around $\Gamma$.…

We demonstrate epitaxial growth of copper selenide (Cu$_{2-x}$Se) thin films in both cubic and rhombohedral phases, achieved via molecular beam epitaxy on Al$_2$O$_3$ (001) substrates. Remarkably, the high-temperature cubic phase -- which…

In this work, the thermo-optic coefficient (TOC) of the silicon-rich amorphous silicon carbide (a-SiC) thin film deposited by plasma-enhanced chemical vapor deposition is characterized. We found that the TOC of the film increases as its…

Hydrogenated amorphous silicon alloy films are generally deposited by radio frequency plasma enhanced chemical vapor deposition (RF PECVD) technique on various types of substrates. Generally it is assumed that film quality remains unchanged…

We report the synthesis of polycrystalline (poly)-SiGe alloy thin films through solid state reaction of Si/Ge multilayer thin films on Si and glass substrates at low temperature of 500 {\deg}C. The pristine thin film was deposited using…

Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was…

Molecular beam epitaxy is used to grow TiSe2 ultrathin films on graphitized SiC(0001) substrate. TiSe2films proceed via a nearly layer-by-layer growth mode and exhibit two dominant types of defects, identified as Se vacancy and…

The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing…

We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that…

In recent decades, the growth of ultrathin epitaxial bismuth (Bi) films on various substrates has garnered interest due to their unique electronic properties. We report upon the growth and electrical transport properties of epitaxial Bi…

We report a direct correlation between carrier mobility and Raman topography of epitaxial graphene (EG) grown on silicon carbide (SiC). We show the Hall mobility of material on the Si-face of SiC [SiC(0001)] is not only highly dependent on…

We perform density functional theory calculations for the determination of the structural and electronic properties of epitaxial graphene on 4H-SiC(000$\bar{1}$). Using commensurate supercells that minimize non-physical stresses we show…

The surface of a topological crystalline insulator (TCI) carries an even number of Dirac cones protected by crystalline symmetry. We epitaxially grew high quality Pb$_{1-x}$Sn$_x$Te(111) films and investigated the TCI phase by in-situ…

While an increasing number of two-dimensional (2D) materials, including graphene and silicene, have already been realized, others have only been predicted. An interesting example is the two-dimensional form of silicon carbide (2D-SiC).…