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Resistive random access memory (RRAM) is a promising candidate for next-generation nonvolatile memory (NVM) and in-memory computing applications. Compact models are essential for analyzing the circuit and system-level performance of…

The complementary field-effect transistors (CFETs), featuring vertically stacked n/p-FETs, enhance integration density and significantly reduce the area of standard cells such as static random-access memory (SRAM). However, the advantage of…

Neuromorphic computing with non-volatile memory (NVM) can significantly improve performance and lower energy consumption of machine learning tasks implemented using spike-based computations and bio-inspired learning algorithms. High…

Despite the promising performance of state space models (SSMs) in long sequence modeling, limitations still exist. Advanced SSMs like S5 and S6 (Mamba) in addressing non-uniform sampling, their recursive structures impede efficient SSM…

We introduce a method for a combined calculation of charge and vector spin transport of elastically tunneling electrons in magnetic scanning tunneling microscopy (STM). The method is based on the three-dimensional Wentzel-Kramers-Brillouin…

Dynamic Random Access Memory (DRAM) is the de-facto choice for main memory devices due to its cost-effectiveness. It offers a larger capacity and higher bandwidth compared to SRAM but is slower than the latter. With each passing generation,…

Permanent Magnet Synchronous Motors (PMSMs) are widely employed in high-performance drive systems due to their high efficiency, power density, and precise dynamic behavior. However, nonlinearities, load disturbances, and parameter…

Electrical static random memory (E-SRAM) is the current standard for internal static memory in Field Programmable Gate Array (FPGA). Despite the dramatic improvement in E-SRAM technology over the past decade, the goal of ultra-fast,…

This paper delves into a comprehensive analysis of fault-tolerant memory systems, focusing on recovery techniques modeled using Markov chains to address transient errors. The study revolves around the application of scrubbing methods in…

Spin Orbit Torque-Magnetic Random Access Memory (SOT-MRAM) is being developed as a successor to the Spin transfer torque MRAM (STT-MRAM) owing to its superior performance on the metrics of reliability and read-write speed. SOT switching of…

The byte-addressable Non-Volatile Memory (NVM) is a promising technology since it simultaneously provides DRAM-like performance, disk-like capacity, and persistency. The current NVM deployment is symmetric, where NVM devices are directly…

Computing-in-memory with emerging non-volatile memory (nvCiM) is shown to be a promising candidate for accelerating deep neural networks (DNNs) with high energy efficiency. However, most non-volatile memory (NVM) devices suffer from…

Deep Neural Networks (DNNs) have emerged as the most effective programming paradigm for computer vision and natural language processing applications. With the rapid development of DNNs, efficient hardware architectures for deploying…

Several variants of the Long Short-Term Memory (LSTM) architecture for recurrent neural networks have been proposed since its inception in 1995. In recent years, these networks have become the state-of-the-art models for a variety of…

SRAM-based FPGAs are popular in the aerospace industry for their field programmability and low cost. However, they suffer from cosmic radiation-induced Single Event Upsets (SEUs). Triple Modular Redundancy (TMR) is a well-known technique to…

The wide availability of data coupled with the computational advances in artificial intelligence and machine learning promise to enable many future technologies such as autonomous driving. While there has been a variety of successful…

Relaxed retention (or volatile) spin-transfer torque RAM (STT-RAM) has been widely studied as a way to reduce STT-RAM's write energy and latency overheads. Given a relaxed retention time STT-RAM level one (L1) cache, we analyze the impacts…

Despite its maturity, the field of fault-tolerant redundancy suffers from significant terminological fragmentation, where functionally equivalent methods are frequently described under disparate names across academic and industrial domains.…

Spin-orbit torque (SOT) is an emerging technology that enables the efficient manipulation of spintronic devices. The initial processes of interest in SOTs involved electric fields, spin-orbit coupling, conduction electron spins and…

Oxide-based Random Access Memory (OxRAM), is part of the larger family of Resistive RAM (RRAM) memories. Generally OxRAM cells consist of a transition metal oxide (typically HfO2, Ta2O5, TiO2) sandwiched between two metal electrodes…