Related papers: Survey on STT-MRAM Testing: Failure Mechanisms, Fa…
To improve power efficiency, researchers are experimenting with dynamically adjusting the supply voltage of systems below the nominal operating points. However, production systems are typically not allowed to function on voltage settings…
Magnetic tunnel junction (MTJ)-based magnetic random-access memory (MRAM) is a promising platform for neuromorphic and in-memory computing owing to its non-volatility, high endurance, fast switching dynamics and CMOS compatibility. However,…
Spin-orbit torques (SOT) provide a versatile tool to manipulate the magnetization of diverse classes of materials and devices using electric currents, leading to novel spintronic memory and computing approaches. In parallel to spin transfer…
A new genre of Spin-Transfer Torque (STT) MRAM is proposed, in which bi-directional writing is achieved using thermoelectrically controlled magnonic current as an alternative to conventional electric current. The device uses a magnetic…
In this paper, we demonstrate the design of efficient and high-performance AI/Deep Learning accelerators with customized STT-MRAM and a reconfigurable core. Based on model-driven detailed design space exploration, we present the design…
Weak-memory models are standard formal specifications of concurrency across hardware, programming languages, and distributed systems. A fundamental computational problem is consistency testing: is the observed execution of a concurrent…
Spiking neural networks (SNNs) have shown a potential for having low energy with unsupervised learning capabilities due to their biologically-inspired computation. However, they may suffer from accuracy degradation if their processing is…
In this work, we present a novel non-volatile spin transfer torque (STT) assisted spin-orbit torque (SOT) based ternary content addressable memory (TCAM) with 5 transistors and 2 magnetic tunnel junctions (MTJs). We perform a comprehensive…
The rapid advancement of neuromorphic technology aims to address the memory wall challenge inherent in conventional von Neumann architectures. This paper critically examines current digital neuromorphic processors and their strategies to…
Emerging Persistent Memory technologies (also PM, Non-Volatile DIMMs, Storage Class Memory or SCM) hold tremendous promise for accelerating popular data-management applications like in-memory databases. However, programmers now need to deal…
Recently, spin-transfer torque (STT) based magnetization switching has been widely utilized in magnetic resistance-based memories, which have broad applications in microcontroller units and other devices. This study utilizes a macrospin…
As transistor-based memory technologies like dynamic random access memory (DRAM) approach their scalability limits, the need to explore alternative storage solutions becomes increasingly urgent. Phase-change memory (PCM) has gained…
In this paper, we study the inference accuracy of the Resistive Random Access Memory (ReRAM) neuromorphic circuit due to stuck-at faults (stuck-on, stuck-off, and stuck at a certain resistive value). A simulation framework using Python is…
Non-volatile flip-flops (NVFFs) using power gating techniques promise to overcome the soaring leakage power consumption issue with the scaling of CMOS technology. Magnetic tunnel junction (MTJ) is a good candidate for constructing the NVFF…
Stateful logic is a promising processing-in-memory (PIM) paradigm to perform logic operations using emerging nonvolatile memory cells. While most stateful logic circuits to date focused on technologies such as resistive RAM, we propose two…
We investigated the performance of spin transfer torque random access memory (STT-RAM) cell with cross shaped Heusler compound based free layer using micromagnetic simulations. We designed the free layer using Cobalt based Heusler…
Energy-efficient methods are addressed for leveraging low energy barrier nanomagnetic devices within neuromorphic architectures. Using a Magnetoresistive Random Access Memory (MRAM) probabilistic device (p-bit) as the basis of neuronal…
Reliability has taken centre stage in the development of high-performance computing processors. A Surge of interest is noticeable in recent times in formulating fault and failure models, understanding failure mechanism and strategizing…
Spin-Transfer Torque Magnetic RAM} (STT-MRAM) is a promising alternative for SRAMs in on-chip cache memories. Besides all its advantages, high error rate in STT-MRAM is a major limiting factor for on-chip cache memories. In this paper, we…
Performance and reliability are two prominent factors in the design of data storage systems. To achieve higher performance, recently storage system designers use DRAM-based buffers. The volatility of DRAM brings up the possibility of data…