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Related papers: Magnetic properties of Mn-doped Bi$_2$Se$_3$ topol…

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We present a first-principles study of the electronic, magnetic, and transport properties of the topological insulator Bi$_{2}$Te$_{3}$ doped with Mn atoms in substitutional (Mn$_{\rm Bi}$) and interstitial van der Waals gap positions…

Materials Science · Physics 2016-06-15 K. Carva , J. Kudrnovský , F. Máca , V. Drchal , I. Turek , P. Baláž , V. Tkáč , V. Holý , V. Sechovský , J. Honolka

Magnetic interaction with the gapless surface states in topological insulator (TI) has been predicted to give rise to a few exotic quantum phenomena. However, the effective magnetic doping of TI is still challenging in experiment. Using…

Materials Science · Physics 2014-01-06 Jian-Min Zhang , Wenmei Ming , Zhigao Huang , Gui-Bin Liu , Xufeng Kou , Yabin Fan , Kang L. Wang , Yugui Yao

The development of ferromagnetism in Mn-doped Bi2Te3 is characterized through measurements on a series of single crystals with different Mn content. Scanning tunneling microscopy analysis shows that the Mn substitutes on the Bi sites,…

The magnetic and electronic properties of the magnetically doped topological insulator Bi$_{\rm 2-x}$Mn$_{\rm x}$Te$_3$ were studied using electron spin resonance (ESR) and measurements of static magnetization and electrical transport. The…

Strongly Correlated Electrons · Physics 2016-09-28 S. Zimmermann , F. Steckel , C. Hess , H. W. Ji , Y. S. Hor , R. J. Cava , B. Büchner , V. Kataev

Topological insulators with intrinsic magnetic ordering, potentially hosting rare quantum effects, recently attracted extensive attention. MnBi$_2$Te$_4$ is the first established example. The Sb-doped variant Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$…

Materials Science · Physics 2022-06-01 M. Köpf , S. H. Lee , H. Kumar , Z. Q. Mao , C. A. Kuntscher

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…

Materials Science · Physics 2013-01-08 Jian-Min Zhang , Wenguang Zhu , Ying Zhang , Di Xiao , Yugui Yao

We present a detailed investigation of the magnetic and structural properties of magnetically doped 3D topological insulator Bi2Se3. From muon spin relaxation measurements in zero magnetic field, we find that even 5% Fe doping on the Bi…

Strongly Correlated Electrons · Physics 2012-03-23 Z. Salman , E. Pomjakushina , V. Pomjakushin , A. Kanigel , K. Chashka , K. Conder , E. Morenzoni , T. Prokscha , K. Sedlak , A. Suter

Topological insulators are characterized by the existence of band inversion and the possibility of the realization of surface states. Doping with a magnetic atom, which is a source of the time-reversal symmetry breaking, can lead to…

Materials Science · Physics 2020-11-17 Andrzej Ptok , Konrad Jerzy Kapcia , Anna Ciechan

Magnetic susceptibility $\chi$ of Bi$_{2-x}$Mn$_{x}$Se$_3$ ($x = 0.01-0.2$) was measured in the temperature range $4.2-300$ K. For all the samples, a Curie-Weiss behaviour of $\chi(T)$ was revealed with effective magnetic moments of Mn ions…

Materials Science · Physics 2015-10-01 A. S. Panfilov , G. E. Grechnev , A. V. Fedorchenko , K. Conder , E. V. Pomjakushina

Magnetically doped topological insulators enable the quantum anomalous Hall effect (QAHE) which provides quantized edge states for lossless charge transport applications. The edge states are hosted by a magnetic energy gap at the Dirac…

We combine low energy muon spin rotation (LE-$\mu$SR) and soft-X-ray angle-resolved photoemission spectroscopy (SX-ARPES) to study the magnetic and electronic properties of magnetically doped topological insulators, (Bi,Sb)$_2$Te$_3$. We…

The percentage of substitutional doping of magnetic atoms (Mn) in group-IV-based dilute magnetic semiconductors (DMS) can be increased by co-doping with another conventional electronic dopant (e-dopant) [Zhu et al., Phys. Rev. Lett. 100,…

Materials Science · Physics 2009-06-04 Hua Chen , Wenguang Zhu , Efthimios Kaxiras , Zhenyu Zhang

Topological insulators embody a new state of matter characterized entirely by the topological invariants of the bulk electronic structure rather than any form of spontaneously broken symmetry. Unlike the 2D quantum Hall or quantum…

Twin domains are naturally present in the topological insulator \BiSe{} and affect strongly its properties. While studies of its behavior for ideal \BiSe{} structure exist, little is known about their possible interaction with other…

Materials Science · Physics 2020-10-26 Jakub Šebesta , Karel Carva , Dominik Kriegner , Jan Honolka

Abundant phenomena in CoCr2-xMnxO4 (x = 0 ~ 2) samples such as magnetic compensation, magnetostriction and exchange bias effect have been observed and investigated in this work. A structure transition from cubic to tetragonal symmetry has…

Materials Science · Physics 2013-10-21 H. G. Zhang , W. H. Wang , E. K. Liu , X. D. Tang , G. J. Li , J. L. Chen , H. W. Zhang , G. H. Wu

Magnetic doping with transition metal ions is the most widely used approach to break timereversal symmetry in a topological insulator, a prerequisite for unlocking the TIs exotic potential. Recently, we reported the doping of Bi2Te3 thin…

Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases.…

The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide…

Mn doped semiconductors are extremely interesting systems due to their novel magnetic properties suitable for the spintronics applications. It has been shown recently by both theory and experiment that Mn doped GaN systems have a very high…

Materials Science · Physics 2016-08-31 B. Sanyal , O. Bengone , S. Mirbt

We investigate the properties of a single substitutional Mn impurity and its associated acceptor state on the (111) surface of Bi$_2$Se$_3$ topological insulator. Combining ab initio calculations with microscopic tight-binding modeling, we…

Materials Science · Physics 2014-12-01 M. R. Mahani , A. Pertsova , M. Fhokru Islam , C. M. Canali
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