Related papers: Controlling vertical magnetization shift by spin-o…
Electric field induced spin-orbit torques are the crucial mechanism for electric regulations of antiferromagnetic order. However, the spin-orbit torques in antiferromagnets and the induced spin dynamics remain largely unexplored. In this…
Spin field-effect transistors (SFETs) are promising candidates for low-power spin-based electronics, yet existing realizations that rely on spin-orbit coupling are constrained by limited material choices and short spin-coherence lengths.…
In ferromagnetic systems lacking inversion symmetry, an applied electric field can control the ferromagnetic order parameters through the spin-orbit torque. The prototypical example is a bilayer heterostructure composed of a ferromagnet and…
Metal-insulator transitions (MITs) in resistive switching materials can be triggered by an electric stimulus that produces significant changes in the electrical response. When these phases have distinct magnetic characteristics, dramatic…
Spin orbit torque (SOT) has become a promising approach to efficiently manipulate the magnetization switching in spintronic devices. As a main factor to impact the device performance, the high quality interface is essentially desired, which…
Control of magnetic order in antiferromagnets is a central challenge in the development of next-generation spintronic devices. Here, we propose and analyze magnetization switching driven by the field-derivative torque, a torque that…
The domain state model for exchange bias has been further investigated by considering vector spins for the antiferromagnet instead of Ising spins used in the earlier studies. The qualitative results are similar to those with infinite…
We demonstrate magnetization switching in out-of-plane magnetized Ta\CoFeB\MgO nanowires by current pulse injection along the nanowires, both with and without a constant and uniform magnetic field collinear to the current direction. We…
Since the discovery of the spin orbit torque (SOT) induced by spin Hall effect in heavy metals, much effort has been devoted to understanding the mechanism of the charge-to-spin conversion as well as to developing new schemes for high…
In conventional exchange-bias system comprising of a bilayer film of ferromagnet (FM) and antiferromagnet (AFM), investigating the role of spin-disorder and spin-frustration inside the AFM and at the interface has been crucial in…
We measure the spin-charge interconversion by the spin Hall effect in ferromagnetic/Pt nanodevices. The extracted effective spin Hall angles (SHAs) of Pt evolve drastically with the ferromagnetic (FM) materials (CoFe, Co, and NiFe), when…
The magnetic properties of a nanoscale system are inextricably linked to its local environment. In ad-atoms on surfaces and inorganic layered structures the exchange interactions result from the relative lattice positions, layer thicknesses…
We study the spin-dependent magneto conductance in mesoscopic rings subject to an inhomogeneous in-plane magnetic field. We show that the polarization direction of transmitted spin-polarized electrons can be controlled via an additional…
The magnetization switching of a thin ferromagnetic layer placed on top of a heavy metal (such as Pt, Ta or W) driven by an in-plane current has been observed in recent experiments. The magnetization dynamics of these processes is studied…
Perpendicular exchange bias (EB), which combines the perpendicular magnetic anisotropy and the ferromagnetic (FM) - antiferromagnetic (AFM) exchange coupling, is extremely important in the high-density AFM spintronics. However, the…
In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect…
Continuous switching driven by spin-orbit torque (SOT) is preferred to realize neuromorphic computing in a spintronic manner. Here we have applied focused ion beam (FIB) to selectively illuminate patterned regions in a Pt/Co/MgO strip with…
Processing-in-memory (PIM) reduces data transfer latency by rolling memory and logic elements into one compute location. As an emergent material candidate for such an architecture, we propose a strained Weyl semimetal based…
Spintronic devices, such as non-volatile magnetic random access memories and logic devices, have attracted considerable attention as potential candidates for future high efficient data storage and computing technology. In a heavy metal or…
Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent…