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Related papers: Electron glass effects in amorphous NbSi films

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We report on transport measurements in a thin film of the 2D misfit Cobaltite $Ca_{3}Co_{4}O_{9}$. Dc magnetoresistance measurements obey the modified variable range hopping law expected for a soft Coulomb gap. When the sample is cooled…

Strongly Correlated Electrons · Physics 2009-11-11 A. Pautrat , H. W Eng , W. Prellier

In this work we revisit vast amount of existing data on physical properties of Ti-Zr-Nb-(Cu,Ni,Co) glassy alloys over a broad range of concentrations (from the high entropy range to that of conventional Cu-, Ni- or Co-rich alloys). By using…

We present an undergraduate lab that investigates weak localization in thin silver films. The films prepared in our lab have thickness, $a$, between 60-200 \AA, a mesoscopic length scale. At low temperatures, the inelastic dephasing length…

Physics Education · Physics 2009-11-11 A. D. Beyer , M. Koesters , K. G. Libbrecht , E. D. Black

Epitaxial thin films of charge-ordered Pr$_{0.625}$Ca$_{0.375}$MnO$_{3}$ have been studied using variable temperature Scanning tunneling microscopy and spectroscopy (STM/STS). The as grown films were found to be granular while the annealed…

Strongly Correlated Electrons · Physics 2015-05-13 Udai Raj Singh , S. Chaudhuri , Anirban Dutta , R. C. Budhani , Anjan K. Gupta

We report investigations of the optical properties of the narrow gap semiconductor FeSb2 in comparison with the structural homolog RuSb2. In the infrared region the latter shows insulating behavior in whole investigated temperature range…

Strongly Correlated Electrons · Physics 2010-12-16 A. Herzog , M. Marutzky , J. Sichelschmidt , F. Steglich , S. Kimura , S. Johnsen , B. B. Iversen

The sign change in the Hall conductivity has been studied in thin amorphous Nb$_{1-x}$Ge$_x (x\approx$0.3) films. By changing the film thickness it is shown that the field at which the sign reversal occurs shifts to lower values (from above…

Superconductivity · Physics 2009-11-07 Nobuhito Kokubo , Jan Aarts , Peter H. Kes

Reliable and accurate characterization of the electrocaloric effect is necessary to understand the intrinsic properties of materials. To date, several methods have been developed to directly measure the electrocaloric effect. However, each…

Electron-glasses can be readily driven far from equilibrium by a variety of means. Several mechanisms to excite the system and their relative merits are reviewed. In this study we focus on the process of exciting electron-glasses by…

Strongly Correlated Electrons · Physics 2011-06-22 Z. Ovadyahu

We have studied the resistivity, $\rho$, of a two-dimensional electron system in silicon in the temperature range 200 mK < T < 7.5 K at zero magnetic field at low electron densities, when the electron system is in the insulating regime. Our…

Condensed Matter · Physics 2009-10-28 Whitney Mason , S. V. Kravchenko , G. E. Bowker , J. E. Furneaux

Hafnium dioxide, also known as hafnia, is an extremely sought-after material in opto- and nanoelectronics for creating optical coatings and various functional media to have stable performance characteristics under varying thermal operating…

Materials Science · Physics 2025-09-10 A. O. Shilov , S. S. Savchenko , A. S. Vokhmintsev , V. A. Gritsenko , I. A. Weinstein

In this work, we provide a systematic study of the magnetic field penetration process and avalanche formation in niobium films of different thicknesses deposited on glass substrates. The research was carried out by means of direct…

Superconductivity · Physics 2023-03-22 I. Abaloszewa , M. Z. Cieplak , A. Abaloszew

The iron antimonide FeSb$_2$ possesses an extraordinarily high thermoelectric power factor at low temperature, making it a leading candidate for cryogenic thermoelectric cooling devices. However, the origin of this unusual behavior is…

Strongly Correlated Electrons · Physics 2018-08-15 C. C. Homes , Q. Du , C. Petrovic , W. H. Brito , S. Choi , G. Kotliar

Electron transport is studied in surface oxidized single-crystal copper thin films with a thickness of up to 5.6 nm by applying density functional theory and density functional tight binding methods to determine electron transport…

This paper presents the effect of different cooling rate after annealing on structural and electrical properties of TiO2 thin films. Titanium dioxide thin film was deposited on a silicon substrate using DC magnetron technique. After…

Applied Physics · Physics 2020-01-08 Shokoufeh Asalzadeh , Kiomars Yasserian

We study the deviations from perfect memory in negative temperature cycle spin glass experiments. It is known that the a.c. susceptibility after the temperature is raised back to its initial value is superimposed to the reference isothermal…

Disordered Systems and Neural Networks · Physics 2009-11-07 M. Sasaki , V. Dupuis , J. -P. Bouchaud , E. Vincent

We have used symmetric normal metal-insulator-superconductor (NIS) tunnel junction pairs, known as SINIS structures, for ultrasensitive thermometry in the temperature range 50 - 700 mK. By Joule heating the electron gas and measuring the…

Mesoscale and Nanoscale Physics · Physics 2007-05-23 J. T. Karvonen , L. J. Taskinen , I. J. Maasilta

Noncollinear antiferromagnets with a D0$_{19}$ (space group = 194, P6$_{3}$/mmc) hexagonal structure have garnered much attention for their potential applications in topological spintronics. Here, we report the deposition of continuous…

Highly disordered NbN thin films exhibit promising superconducting and optical properties. Despite extensive study, discrepancies in its basic electronic properties persist. Analysis of the optical conductivity of disordered ultra-thin NbN…

We fabricated NiFe$_\textrm{2}$O$_\textrm{x}$ thin films on MgAl$_2$O$_4$(001) substrates by reactive dc magnetron co-sputtering varying the oxygen partial pressure during deposition. The fabrication of a variable material with oxygen…

Amorphous Si (a-Si) nanostructures are ubiquitous in numerous electronic and optoelectronic devices. Amorphous materials are considered to possess the lower limit to the thermal conductivity (k), which is ~1 W/m-K for a-Si. However, recent…

Materials Science · Physics 2017-01-03 Soonshin Kwon , Jianlin Zheng , Matthew C. Wingert , Shuang Cui , Renkun Chen
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