Related papers: Controlling spin current polarization through non-…
The control of spin-dependent properties by voltage, not involving magnetization switching, has significant advantages for low-power spintronics. Here, we predict that the interfacial crystal Hall effect (ICHE) can serve for this purpose.…
It is shown that the flow of electric current in an altermagnet results in the formation of a homogeneous electron spin orientation in the sample. The spin of the conduction electrons generated in altermagnets with $d$-wave spin-momentum…
Recent discovery of orbital currents in several material platforms including light element metals has opened new possibilities for exploring novel transport phenomena and applications to spin-orbitronic devices. These orbital currents,…
Electric control of magnetism at room temperature is crucial for developing next-generation, low-power spintronic devices. However, the intrinsic incompatibility between ferroelectricity and magnetism in crystal symmetry, along with the…
Nonequilibrium quantum states can be controlled via the driving field in periodically driven systems. Such control, which is called Floquet engineering, has opened various phenomena, such as the light-induced anomalous Hall effect. There…
Electrical readout of 180$^\circ$ switching in strictly compensated collinear antiferromagnets remains a major challenge in antiferromagnetic spintronics. Electrical writing of perpendicularly magnetized ferromagnets by out-of-plane orbital…
We present here a brief overview of current-induced spin polarization in bulk semiconductors and semiconductor structures of various dimension. The role of band structure and spin relaxation processes is discussed. The related phenomena,…
We formulate a theory of current-induced spin torques in inhomogeneous III-V ferromagnetic semiconductors. The carrier spin-3/2 and large spin-orbit interaction, leading to spin non-conservation, introduce significant conceptual differences…
Motivated by the recently discovered magnonic Hanle effect in an insulating antiferromagnet [Wimmer et al., Phys. Rev. Lett. 125, 247204 (2020)], we develop a spin transport theory based on low-energy waves of antiferromagnetic N\'eel…
The ability to convert spin accumulation to charge currents is essential for applications in spintronics. In semiconductors, spin-to-charge conversion is typically achieved using the inverse spin Hall effect or using a large magnetic field.…
We study ballistic transport through semiconductor quantum point contact systems under different confinement geometries and applied fields. In particular, we investigate how the {\em lateral} spin-orbit coupling, introduced by asymmetric…
Noncollinear antiferromagnets (AFMs) have recently attracted attention in the emerging field of antiferromagnetic spintronics because of their various interesting properties. Due to the noncollinear magnetic order, the localized electron…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced,…
Harnessing the unique properties of non-collinear antiferromagnets (AFMs) will be essential for exploiting the full potential of antiferromagnetic spintronics. Indeed, many of the effects enabling ferromagnetic spintronic devices have a…
The non-thermal optical control of magnetic order offers a promising route to ultrafast, energy-efficient information technologies. Although optical manipulation of magnetism in metals has been extensively studied, experimentally…
We demonstrate that spin-orbit coupled electrons in a magnetically doped system exert a spin torque on the local magnetization, without a flowing current, when the chemical potential is modulated in a magnetic field. The spin torque is…
It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…
We study the dependence of the intrinsic spin Hall effect on the crystal symmetry and geometry of experiment. The spin current is obtained and the Hall voltage caused by the polarization of the electron spins is computed. The unique…
We propose a novel ferroelectric switchable altermagnetism effect, the reversal of ferroelectric polarization is coupled to the switching of altermagnetic spin splitting. We demonstrate the design principles for the ferroelectric…