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Related papers: Shallow impurity band in ZrNiSn

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We report $^{59}$Co, $^{93}$Nb, and $^{121}$Sb nuclear magnetic resonance (NMR) measurements combined with density functional theory (DFT) calculations on a series of half-Heusler semiconductors, including NbCoSn, ZrCoSb, TaFeSb and NbFeSb,…

The knowledge of Half-Heusler compounds have attracted much attention as materials for thermoelectric applications. In this work, we investigate, using first-principles calculations, the electronic, vibrational, and defect properties of…

Materials Science · Physics 2024-10-30 Mateus Corradini Lopes , Alex Antonelli

The ternary semiconductors NiZrSn and CoZrBi with C1_b crystal structure are introduced by calculating their basic structural, electronic and phononic properties using density functional theory. Both the gradient-corrected PBE functional…

Materials Science · Physics 2019-09-27 Gregor Fiedler , Peter Kratzer

Half-Heusler phases (space group F43m, C1b) have recently captured much attention as promising thermoelectric materials for heat-to-electric power conversion in the mid-to-high temperature range. The most studied ones are the RNiSn-type…

Materials Science · Physics 2018-12-06 S. Joseph Poon

Half-Heusler (HH) phases (space group F43m, Clb) are increasingly gaining attention as promising thermoelectric materials in view of their thermal stability, scalability, and environmental benignity as well as efficient power output. Until…

Materials Science · Physics 2016-08-24 L. Chen , X. Zeng , T. M. Tritt , S. J. Poon

In this work, we try to understand the experimental thermoelectric (TE) properties of a ZrNiSn sample with DFT and semiclassical transport calculations using SCAN functional. SCAN and mBJ provide the same band gap $E_{g}$ of $\sim$0.54 eV.…

Strongly Correlated Electrons · Physics 2020-06-24 Shivprasad S. Shastri , Sudhir K. Pandey

Half Heusler (HH) thermoelectric alloys provide a wide platform to choose materials with non-toxic and earth abundant elements. This article presents an ab-initio theoretical evaluation of electrical and thermal transport properties of…

Materials Science · Physics 2016-10-21 Vikram , Jiban Kangsabanik , Enamullah , Aftab Alam

We have investigated the electronic and thermoelectric properties of half-Heusler alloys NiTZ (T = Sc, and Ti; Z = P, As, Sn, and Sb) having 18 valence electron. Calculations are performed by means of density functional theory and Boltzmann…

Half-Heusler phases are among the most extensively studied thermoelectic materials. Bipolar thermal conductivity analysis performed for their sub-group based on rare-earth (R) metals, RNiSb, indicated on high mobility ratio in favor of…

Materials Science · Physics 2024-08-09 K. M. Ciesielski , D. Kaczorowski

The discovery of Heusler alloys has revolutionized the research field of intermetallics due to the ease with which one can derive potential candidates for multifunctional applications. During recent years, many half Heusler alloys have been…

Materials Science · Physics 2016-05-25 S. Krishnaveni , M. Sundareswari , P. C. Deshmukh , S. R. Valluri , Ken Roberts

Half-Heusler compounds (space group Fm3m) has garnered increasing attention in recent years in the thermoelectric community. Three decades ago, refractory RNiSn half-Heusler compounds (R represents refractory metals such as Hf, Zr, Ti) were…

Materials Science · Physics 2020-01-08 S. Joseph Poon

Enhancing band convergence is an effective way to optimize the thermoelectric (TE) properties of materials. However, the temperature-induced band renormalization is commonly ignored. By employing the recently-developed electron-phonon…

Materials Science · Physics 2024-07-02 Jinyang Xi , Zirui Dong , Menghan Gao , Jun Luo , Jiong Yang

The thermoelectric properties of n type semiconductor, TiNiSn is optimized by partial substitution with metallic, MnNiSb in the half Heusler structure. Herein, we study the transport properties and intrinsic phase separation in the system.…

Disordered Systems and Neural Networks · Physics 2016-12-06 T. Berry , S. Ouardi , G. H. Fecher , B. Balke , G. Kreiner , G. Auffermann , W. Schnelle , C. Felser

Hybrid functionals and empirical correction schemes are compared to conventional semi-local density functional theory (DFT) calculations in order to assess the predictive power of these methods concerning the formation energy and the charge…

Materials Science · Physics 2013-07-02 Sung Sakong , Johann Gutjahr , Peter Kratzer

The LnSbTe family is well known for hosting a plethora of intriguing characteristics stemming from its crystalline symmetry, magnetic structure, 4f electronic correlations and spin orbit coupling (SOC) phenomena. In this paper, we have…

We report first principles LDA calculations of the electronic structure and thermoelectric properties of $\beta $-Zn$_{4}$Sb$_{3}$. The material is found to be a low carrier density metal with a complex Fermi surface topology and…

Materials Science · Physics 2009-10-30 Seong-Gon Kim , I. I. Mazin , D. J. Singh

Half-Heusler (HH) alloys are potential thermoelectric materials for use at elevated temperatures due to their high Seebeck coefficient and superior mechanical and thermal stability. However, their enhanced lattice thermal conductivity is…

Materials Science · Physics 2025-04-23 Rajeev Ranjan

The electronic structure and thermoelectric properties of ZrRuTe-based Half-Heusler compounds are studied using density functional theory (DFT) and Boltzmann transport formalism. Based on rigorous computations of electron relaxation time…

Materials Science · Physics 2020-03-13 Sonu Prasad Keshri , Amal Medhi

Thermoelectric figures of merit, ZT > 0.5, have been obtained in arc-melted TiNiSn-based ingots. This promising conversion efficiency is due to a low lattice thermal conductivity, which is attributed to excess nickel in the half-Heusler…

Materials Science · Physics 2013-01-04 R. A. Downie , D. A. MacLaren , R. I. Smith , J. W. G. Bos

The Hall and Seebeck coefficients, electrical resistivity and thermal conductivity of polycrystalline NiSi3P4 were characterized from 2 to 775K. Undoped NiSi3P4 behaves like a narrow gap semiconductor, with activated electrical resistivity…

Materials Science · Physics 2013-03-18 Andrew F. May , Michael A. McGuire , Hsin Wang
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