Related papers: Study of a Passive Gating Grid for Ion Back Flow S…
Having sufficient grid-forming sources is one of the necessary conditions to guarantee the stability in a power system hosting a very large share of inverter-based generation. The grid-forming function has been historically fulfilled by…
We report electrical measurements of the current-induced spin polarization of the surface current in topological insulator devices where contributions from bulk and surface conduction can be disen- tangled by electrical gating. The devices…
We demonstrate a tunneling and rectification behavior in bilayer graphene. A stepped dielectric top gate creates a spatially modulated electric field, which opens the band gap in the graphene and produces an insulating region at the p-n…
The numerical simulation of the development of a streamer discharge in a gap with an external longitudinal magnetic field was used to demonstrate the self-focusing of such discharges. Self-focusing is caused by a sharp deceleration of the…
A light-emitting-diodes (LEDs)-integrated silicon carbide (SiC) insulated gate bipolar transistors (LI-IGBT) is proposed in this paper. The novelty of the LI-IGBT depends on the photogeneration effect of III-nitride LEDs embedded in the…
Integrated sensing and communications (ISAC) is poised to be a native technology for the forthcoming Sixth Generation (6G) era, with an emphasis on its potential to enhance communications performance through the integration of sensing…
We investigated the nonlinear phenomena observed in the dark current of BIB (blocked-impurity-band) infrared detectors, including negative differential resistance (NDR) and current oscillations. Our analysis systematically elucidated the…
Low-energy heavy-ion beams are fundamentally limited by severe space-charge divergence, which constrains the transportable beam current to a few microamperes in conventional electrostatic accelerators. This limitation is particularly…
We solve the coherent multiple Andreev reflection (MAR) problem and calculate current-voltage characteristics (IVCs) for Josephson SINIS junctions, where S are local-equilibrium superconducting reservoirs, I denotes tunnel barriers, and N…
Air-vented ionization chambers exposed to clinical radiation beams may suffer from recombination during the drift of the charge carriers towards the electrodes. Thus, dosimetry protocols recommend the use of a correction factor, usually…
Ion implantation is a non-equilibrium doping technique which introduces impurity atoms into a solid regardless of thermodynamic considerations. The formation of metastable alloys above the solubility limit, minimized contribution of lateral…
Ion-Sensitive Field-Effect Transistors (ISFETs) form a wide-spread technology for sensing, thanks to their label-free detection and intrinsic CMOS compatibility. Their current sensitivity, {\Delta}ID/ID, for a given {\Delta}pH, however, is…
High-redshift quasars (z >~ 6) drive ionization fronts into the intergalactic medium (IGM). If the thickness of the front can be measured, it can provide a novel constraint on the ionizing spectral energy distribution (SED). Here we follow…
Time-resolved atom interferometry, as employed in applications such as gravitational wave detection and searches for ultra-light dark matter, requires precise control over systematic effects. In this work, we investigate phase noise arising…
In recent years the need for DC distribution buses has increased considerably. As it can be noticed in the transport for example the distribution systems of the more electric aircrafts, ships, or electric cars. Given the complexities of the…
Electron transport in a disordered graphene nanoribbon with zigzag edges is crucially affected by a perfectly conducting channel (PCC), which is stabilized if intervalley scattering is ignorable. In the presence of such a PCC, the…
Grid-forming (GFM) inverters can significantly alter the fault characteristics of power systems, which challenges the proper function of protective relays. This paper gives a holistic analysis of the interaction between GFM inverter-based…
The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The…
The counterpropagating edge states of a two-dimensional topological insulator (TI) carry electrons of opposite spins. We investigate the transport properties of edge states in a two-dimensional TI which is contacted to ferromagnetic leads.…
Ising spin-orbit coupling (ISOC) can strongly protect superconductivity against exchange-field-induced depairing, typically leading to critical fields far exceeding the Pauli limit and continuous (second-order) phase transitions. Here,…