Related papers: 2D-Dirac surface states and bulk gap probed via qu…
Nontrivial topology in type-II Dirac semimetal NiTe$_2$ leading to topologically protected surface states give rise to fascinating phenomena holding great promise for next-generation electronic and spintronic devices. Key parameters $-$…
As the thickness of a three-dimensional (3D) topological insulator (TI) becomes comparable to the penetration depth of the surface states, quantum tunneling between surfaces turns their gapless Dirac electronic structure into a gapped…
Magnetism breaks the time reversal symmetry expected to open a Dirac gap in 3D topological insulators that consequently leads to quantum anomalous Hall effect. The most common approach of inducing ferromagnetic state is by doping magnetic…
Bi2Se3 is theoretically predicted1 2and experimentally observed2,3 to be a three dimensional topological insulator. For possible applications, it is important to understand the electronic structure of the planar device. In this work,…
Fascinating phenomena have been known to arise from the Dirac theory of relativistic quantum mechanics, which describes high energy particles having linear dispersion relations. Electrons in solids usually have non-relativistic dispersion…
In a typical situation, gapless surface states of a three-dimensional (3D) weak topological insulator (WTI) appear only on sides, leaving the top and bottom surfaces gapped. To describe massless Dirac electrons emergent on such side…
We use real-time reflection high energy electron diffraction intensity oscillation to establish the Te-rich growth dynamics of topological insulator thin films of Bi2Te3 on Si(111) substrate by molecular beam epitaxy. In situ angle resolved…
Three-dimensional (3D) topological insulators (TIs) are new forms of quantum matter that are characterized by their insulating bulk state and exotic metallic surface state, which hosts helical Dirac fermions1-2. Very recently, BiTeCl, one…
The first experimental evidence is presented of the topological insulator state in PbBi$_{2}$Te$_{4}$. A single surface Dirac cone is observed by angle-resolved photoemission spectroscopy (ARPES) with synchrotron radiation. Topological…
We report transport studies on the 5 nm thick Bi2Se3 topological insulator films which are grown via molecular beam epitaxy technique. The angle-resolved photoemission spectroscopy data show that the Fermi level of the system lies in the…
Using an ab-initio density functional theory based electronic structure method with a semi-local density approximation, we study thin-film electronic properties of two topological insulators based on ternary compounds of Tl (Thallium) and…
Topological insulators (TIs) are materials with an insulating bulk characterized by a gapped band structure, along with gapless metallic surface states having a Dirac cone with a helical spin structure in momentum space. The helical…
We have studied the energy dispersion of the Dirac bands of the topological insulator Bi2Se3 at large parallel momenta using a setup for laser-based time-resolved momentum microscopy with 6 eV probe-photons. Using this setup, we can probe…
Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the…
In this paper we present scanning tunneling microscopy of Bi$_2$Se$_3$ with superconducting Nb deposited on the surface. We find that the topologically protected surface states of the Bi$_2$Se$_3$ leak into the superconducting over-layer,…
Low energy excitation of surface states of a three-dimensional topological insulator (3DTI) can be described by Dirac fermions. By using a tight-binding model, the transport properties of the surface states in a uniform magnetic field is…
We discuss the ultrafast evolution of the surface electronic structure of the topological insulator Bi$_2$Te$_3$ following a femtosecond laser excitation. Using time and angle resolved photoelectron spectroscopy, we provide a direct…
In an ideal 3D topological insulator (TI), the bulk is insulating and the surface conducting due to the existence of metallic states that are localized on the surface; these are the topological surface states. Quaternary Bi-based compounds…
In 2D topological insulators (TIs) based on semiconductor quantum wells such as HgTe/CdTe or InAs/GaSb/AlSb, spin polarized edge states have been predicted with a massless Dirac like dispersion. In a hard wall treatment based on the 4 x 4…
Ultra-thin topological insulators provide a platform of realizing many exotic phenomena such a Quantum spin Hall effect, Quantum anomalous Hall effect, etc. These effects or states are characterized by quantized transport behavior of edge…