Related papers: Compensated magnetic insulators for extremely fast…
Efficient electrical manipulation of domain walls is key to developing magnetic devices with fast switching capabilities and low energy consumption. Here we demonstrate Bloch-type domain wall velocities exceeding 1 km s$^{-1}$ in the…
The fascinating high-speed field-driven domain wall (DW) motion along ferrimagnetic nanowires near the angular momentum compensation point (AMCP) is solved based on the generic ferrimagnetic dynamics. The physics of the absences of…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
To develop new devices based on synthetic ferrimagnetic heterostructures, understanding the material's physical properties is pivotal. Here, the induced magnetic moment (IMM), magnetic exchange coupling, and spin textures are investigated…
By laser pump-probe time-resolved coherent magnetic X-ray diffraction imaging, we have measured the migration velocity of antiferromagnetic domain walls in the Mott insulator Sr2IrO4 at 100 K. During the laser-induced demagnetization, we…
Magnetic insulators with strong perpendicular magnetic anisotropy (PMA) play a key role in exploring pure spin current phenomena and developing ultralow-dissipation spintronic devices, thereby it is highly desirable to develop new material…
Understanding and manipulating nanoscale domain wall (DW) dynamics is a central topic in magnetism and spintronics for its promising applications in logic and memory devices. In most magnetic systems, inertia affects only transient DW…
Altermagnets (AM) are a novel class of magnetic materials with zero net magnetization but broken time-reversal symmetry and spin-split bands exceeding the spin-orbit coupling scale, offering unique control of individual spin-channel and…
Searching for new methods controlling antiferromagnetic (AFM) domain wall is one of the most important issues for AFM spintronic device operation. In this work, we study theoretically the domain wall motion of an AFM nanowire, driven by the…
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a…
To design fast memory devices, we need material combinations which can facilitate fast read and write operation. We present a heterostructure comprising a two-dimensional (2D) magnet and a 2D topological insulator (TI) as a viable option…
The switching speed and the write current required for spin-transfer-torque reversal of spintronic devices such as magnetic tunnel junctions (MTJ) currently hinder their wide implementation into memory and logic devices. This problem is…
We probe the current-induced magnetic switching of insulating antiferromagnet/heavy metals systems, by electrical spin Hall magnetoresistance measurements and direct imaging, identifying a reversal occurring by domain wall (DW) motion. We…
Spin insulatronics covers efforts to generate, detect, control, and utilize high-fidelity pure spin currents and excitations inside magnetic insulators. Ultimately, the new findings may open doors for pure spin-based information and…
The generation of spin currents is a key challenge in the field of spintronics. We propose using surface acoustic waves (SAWs) to generate spin currents in altermagnetic thin films, thereby realizing an acoustic spin splitter. Altermagnets,…
Spin-polarized antiferromagnets (AFMs), including altermagnets, noncollinear AFMs, and two-dimensional layer-polarized AFMs, have emerged as transformative materials for next-generation spintronic and optoelectronic technologies. These…
Spin textures such as magnetic domain walls and skyrmions have the potential to revolutionize electronic devices by encoding information bits. Although recent advancements in ferromagnetic films have led to promising device prototypes,…
Spin-orbit effects [1-4] have the potential of radically changing the field of spintronics by allowing transfer of spin angular momentum to a whole new class of materials. In a seminal letter to Nature [5], Kajiwara et al. showed that by…
Chiral magnetic materials provide a number of challenging issues such as the highly efficient domain wall (DW) and skyrmion motions driven by electric current, as of the operation principles of emerging spintronic devices. The DWs in the…
Spintronics, a transformative field of research, leverages the spin of electron to revolutionize electronic devices, offering significant advantages over traditional charge-based systems. This chapter highlights the critical role of novel…