Related papers: Compensated magnetic insulators for extremely fast…
The ability to rapidly manipulate domain walls (DWs) in magnetic materials is key to developing novel high-speed spintronic memory and computing devices. Antiferromagnetic (AFM) materials present a particularly promising platform due to…
Antiferromagnetic spintronics is an emerging research field which aims to utilize antiferromagnets as core elements in spintronic devices. A central motivation toward this direction is that antiferromagnetic spin dynamics is expected to be…
Spin-orbitronics and single pulse all-optical switching (AOS) of magnetization are two major successes of the rapidly advancing field of nanomagnetism in recent years, with high potential for enabling novel, fast and energy-efficient memory…
Nanoscale self-localized topological spin textures, such as domain walls and skyrmions, are of interest for the fundamental physics of magnets and spintronics applications. Ferrimagnets (FiMs), in the region close to the angular momentum…
Ferromagnetic materials dominate as the magnetically active element in spintronic devices, but come with drawbacks such as large stray fields, and low operational frequencies. Compensated ferrimagnets provide an alternative as they combine…
Racetrack memory based on magnetic domain walls (DWs) motion exhibits advantages of small volume and high reading speed. When compared to current-induced DW motion, voltage-induced DW motion exhibits lower dissipation. On the other hand,…
The current-driven motion of magnetic domain walls (DWs) is the working principle of magnetic racetrack memories. In this type of spintronic technology, high current densities are used to propel DW motion in magnetic nanowires, causing…
Compensated ferrimagnets are promising materials for fast spintronic applications based on domain wall motion as they combine the favourable properties of ferromagnets and antiferromagnets. They inherit from antiferromagnets immunity to…
The ultrafast magnetic dynamics in compensated ferrimagnets not only provides information similar to antiferromagnetic dynamics, but more importantly opens new opportunities for future spintronic devices [Kim et al., Nat. Mater. 16, 1187…
Voltage-induced motion of a magnetic domain wall (DW) has potential in developing novel devices with ultralow dissipation. However, the speed for the voltage-induced DW motion (VIDWM) in a single ferromagnetic layer is usually very low. In…
The compensated magnetic order and characteristic, terahertz frequencies of antiferromagnetic materials makes them promising candidates to develop a new class of robust, ultra-fast spintronic devices. The manipulation of antiferromagnetic…
Ultrafast dynamics of antiferromagnetic materials is an appealing feature for novel spintronic devices. Several experiments have shown that both, the static states and the dynamical behavior of the antiferromagnetic order, are strictly…
Ferromagnetic domain walls -transitional regions between magnetic domains- are an essential ingredient for racetrack memory, a device concept that promises to deliver faster and more compact memory storage compared to other non-volatile…
We present a theoretical study of the scattering of spin waves by a domain wall (DW) in a ferrimagnetic (FiM) spin chain in which two sublattices carry spins of unequal magnitudes. We find that a narrow, but atomically smooth FiM DW…
Advancing the development of spin-wave devices requires high-quality low-damping magnetic materials where magnon spin currents can propagate efficiently and interact effectively with local magnetic textures. We show that magnetic domain…
Spintronics uses spins, the intrinsic angular momentum of electrons, as an alternative for the electron charge. Its long-term goal is in the development of beyond-Moore low dissipation technology devices. Recent progress demonstrated the…
Recent reports of current-induced switching of ferrimagnetic oxides coupled to a heavy metal layer have opened realistic prospects for implementing magnetic insulators into electrically addressable spintronic devices. However, key aspects…
Antiferromagnetic (AFM) van der Waals (vdW) materials provide a novel platform for synthetic AFM spintronics, in which the spin-related functionalities are derived from manipulating spin configurations between the layers. Metallic vdW…
Domain wall (DW) dynamics in antiferromagnetic (AFM) systems offer the advantages over their ferromagnetic counterparts of having faster and more energy efficient manipulation due to the absence of net magnetization, leading to reduced…
Due to the difficulty in detecting and manipulating magnetic states of antiferromagnetic materials, studying their switching dynamics using electrical methods remains a challenging task. In this work, by employing heavy metal/rare…