Related papers: Picosecond Spin Orbit Torque Switching
The use of magnetic nanowires as memory units is made possible by the exponential divergence of the characteristic time for magnetization reversal at low temperature, but the slow relaxation makes the manipulation of the frozen magnetic…
Ultrafast manipulation of magnetic states is one of the necessities in modern data storage technology. Quantum antiferromagnets are promising candidates in this respect. The orientation of the order parameter, the sublattice magnetization,…
The discovery of all-optical ultra-fast deterministic magnetization switching has opened up new possibilities for manipulating magnetization in devices using femtosecond laser pulses. Previous studies on single pulse all-optical…
Experimentally observed ultrafast all-optical magnetization reversal in ferrimagnetic metals and heterostructures based on antiferromagnetically coupled ferromagnetic $d-$ and $f-$metallic layers relies on intricate energy and angular…
Spin orbit torque (SOT) provides an efficient way of generating spin current that promises to significantly reduce the current required for switching nanomagnets. However, an in-plane current generated SOT cannot deterministically switch a…
Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However,…
Many questions are still open regarding the physical mechanisms behind the magnetic switching in GdFeCo alloys by single optical pulses. Phenomenological models suggest a femtosecond scale exchange relaxation between sublattice…
The aim of the paper is to present a novel class of time-dependent controls to realize ultra-fast magnetization switching in nanomagnets driven by spin-torques produced by spin-polarized electric currents. Magnetization dynamics in such…
With the goal of pushing Spintronic devices towards faster and faster timescales, we demonstrate, using ab-intio time-dependent density functional theory simulations of bulk Heusler compounds subject to ultrashort intense laser pulses, that…
The writing energy for reversing the magnetization of the free layer in a magnetic tunnel junction (MTJ) is a key figure of merit for comparing the performances of magnetic random access memories with competing technologies. Magnetization…
We demonstrated current-induced four-state magnetization switching in a trilayer system using spin-orbit torques. The memory device contains two Co layers with different perpendicular magnetic anisotropy, separated by a space layer of Pt.…
We demonstrate for the first time that a matter physical two level system, a qubit, can be fully controlled using one ultrafast step. We show that the spin state of an optically excited electron, an exciton, confined in a quantum dot, can…
Spin transfer torques allow the electrical manipulation of the magnetization at room temperature, which is desirable in spintronic devices such as spin transfer torque memories. When combined with spin-orbit coupling, they give rise to…
We study a magnetization reversal by an electric current pulse in a superconductor/insulating ferromagnet/superconductor Josephson junction placed on top of a 3D topological insulator. It is demonstrated that such a system is perspective…
For a long time, there have been no efficient ways of controlling antiferromagnets. Quite a strong magnetic field was required to manipulate the magnetic moments because of a high molecular field and a small magnetic susceptibility. It was…
The development of laser science and technology have stimulated the study of condensed matter physics, especially, dynamical or non-equilibrium nature in solids. The laser technique in terahertz (THz) regime, whose photon energy is…
Monolayer transition metal dichalcogenides (TMDs) with strong spin-orbit coupling combined with broken inversion symmetry, leading to a coupling of spin and valley degrees of freedom, make these materials highly interesting for potential…
DC current induced magnetization reversal and magnetization oscillation was observed in 500 nm large size Co90Fe10/Cu/Ni80Fe20 pillars. A perpendicular external field enhanced the coercive field separation between the reference layer…
Magnetic heterostructures that combine large spin-orbit torque efficiency, perpendicular magnetic anisotropy, and low resistivity are key to develop electrically-controlled memory and logic devices. Here we report on vector measurements of…
Domain wall motion driven by ultra-short laser pulses is a prerequisite for envisaged low-power spintronics combining storage of information in magneto electronic devices with high speed and long distance transmission of information encoded…