Related papers: Electrostatics of metal-graphene interfaces: sharp…
We fabricate twisted double bilayer graphene devices with zero twist angle and a set of local top and bottom gates aligned perpendicularly to each other. A 1D PN junction can be electrostatically defined when the gate voltages applied to…
Interface interactions in 2D vertically stacked heterostructures play an important role in optoe-lectronic applications, photodetectors based on graphene/InSe heterostructures had shown promising performance nowadays. However, nonlinear…
Twisted two-dimensional structures open new possibilities in band structure engineering. At magic twist angles, flat bands emerge, which give a new drive to the field of strongly correlated physics. In twisted double bilayer graphene dual…
Graphene devices require electric contacts with metals, particularly with gold. Scanning tunneling spectroscopy studies of electron local density of states performed on mono-, bi- and tri- graphene layer deposited on metallic conductive…
Ballistic transport in graphene p-n junctions in the presence of magnetic field exhibits two distinct regimes: At low fields, transport is partially suppressed by the field. When the field exceeds a certain critical value, the junction is…
We put forward a concept to create highly collimated, non-dispersive electron beams in pseudo-relativistic Dirac materials such as graphene or topological insulator surfaces. Combining negative refraction and Klein collimation at a…
Electrical properties of contact to p-type nitride semiconductor devices, based on gallium nitride were simulated by ab initio and by drift-diffusion calculations. The contact electric properties are shown to be dominated by electron…
In this paper we describe a graphene p-n junction created by chemical doping. We find that chemical doping does not reduce mobility in contrast to top-gating. The preparation technique has been developed from systematic studies about…
Photoexcitation of graphene leads to an interesting sequence of phenomena, some of which can be exploited in optoelectronic devices based on graphene. In particular, the efficient and ultrafast generation of an electron distribution with an…
A model is presented for $pn$ junction formation near metal-semiconductor contacts in two-dimensional semiconducting systems such as graphene. Carrier type switching occurs in a region near the metal-semiconductor junction when energy band…
An Atomic Force Microscope is used to locally manipulate a single layer graphene sheet. Transport measurements in this region as well as in the unmanipulated part reveal different charge carrier densities while mobilities stay in the order…
The one-dimensional side gate based on graphene edges shows a significant capability of reducing the channel length of field-effect transistors, further increasing the integration density of semiconductor devices. The nano-scale electric…
The review is focused on our recent predictions of nontrivial physical phenomena taking place in the nanostructure single-layer grapheme on ferroelectric substrate, which are related with magnetic field. In particular we predicted that…
The global electronic properties of solid-state devices are strongly affected by the microscopic spatial paths of charge carriers. Visualising these paths in novel devices produced by scalable processes would provide a quality assessment…
The increasing technological control of two-dimensional materials has allowed the demonstration of 2D lateral junctions, which display unique properties that might serve as the basis for a new generation of 2D electronic and optoelectronic…
We present a technique to fabricate tunnel junctions between graphene and Al and Cu, with a Si back gate, as well as a simple theory of tunneling between a metal and graphene. We map the differential conductance of our junctions versus…
We investigate the transport of electrons in disordered and pristine graphene devices. Fano shot noise, a standard metric to assess the mechanism for electronic transport in mesoscopic devices, has been shown to produce almost the same…
Graphene is believed to be an excellent candidate material for next-generation electronic devices. However, one needs to take into account the nontrivial effect of metal contacts in order to precisely control the charge injection and…
The recent discovery of methods to isolate graphene, a one-atom-thick layer of crystalline carbon, has raised the possibility of a new class of nano-electronics devices based on the extraordinary electrical transport and unusual physical…
Flexible and biocompatible memristive devices are particularly attractive for bioelectronic systems due to the interest in improving computing capabilities and the motivation to interface electronics with biological systems including drug…