Related papers: Effective classical correspondence of the Mott tra…
The Mott transition is a paradigmatic phenomenon where Coulomb interactions between electrons drive a metal-insulator phase transition. It is extensively studied within the Hubbard model, where a quantum critical transition occurs at a…
We investigate the nature of the interaction-driven Mott-Hubbard transition of the half-filled $t_1{-}t_2$ Hubbard model in one dimension, using a full-fledged variational Monte Carlo approach including a distance-dependent Jastrow factor…
The Mott metal-insulator transition in the two-band Hubbard model in infinite dimensions is studied by using the linearized dynamical mean-field theory. The discontinuity in the chemical potential for the change from hole to electron doping…
We study numerically the voltage-induced breakdown of a Mott insulating phase in a system of charged classical particles with long-range interactions. At half-filling on a square lattice this system exhibits Mott localization in the form of…
We apply the approximate analytic methods to the investigation of the band structure of the asymmetric Hubbard model where the chemical potentials and electron transfer parameters depend on the electron spin (type of quasiparticles). The…
We investigate the interaction-driven reorganization of spin and charge correlations in finite Hubbard clusters using exact diagonalization. Focusing on half-filled and lightly doped square lattices, we analyze spin-resolved charge-gaps,…
We introduce a systematic low-energy approach to strongly correlated electron systems in infinite dimensions, and apply it to the problem of the correlation-induced metal-insulator transition in the half-filled Hubbard model. We determine…
We use quantum Monte Carlo and exact diagonalization calculations to study the Mott-insulator to superconductor quantum phase transition in a two-dimensional fermionic Hubbard model with attractive interactions in the presence of a…
The Mott-Hubbard transition is studied for a Hubbard model with orbital degeneracy N, using a diffusion Monte-Carlo method. Based on general arguments, we conjecture that the Mott-Hubbard transition takes place for U/W \propto \sqrt{N},…
Simulating quantum many-body systems is believed to be one of the most promising applications of near-term noisy quantum computers. However, in the near term, system size limitation will remain a severe barrier for applications in materials…
The anisotropic two-orbital Hubbard model is investigated at low temperatures using high-precision quantum Monte Carlo (QMC) simulations within dynamical mean-field theory (DMFT). We demonstrate that two distinct orbital-selective Mott…
We study the Mott transition as a function of interaction strength in the half-filled Hubbard chain with next-nearest-neighbor hopping t' by calculating the response to an external electric field using the Density Matrix Renormalization…
The interaction-driven evolution from a Fermi liquid to a Mott insulator is a hallmark of strongly correlated fermion systems. In this work, we present a {\it numerically unbiased} study of such metal-to-insulator crossover in the…
We investigate the superfluid-insulator transition of one-dimensional interacting Bosons in both deep and shallow periodic potentials. We compare a theoretical analysis based on Monte-Carlo simulations in continuum space and Luttinger…
We investigate the Mott transition in the Kagom\'e lattice Hubbard model using a cluster extension of dynamical mean field theory. The calculation of the double occupancy, the density of states, the static and dynamical spin correlation…
A powerful new impurity solver is shown to permit a systematic study of the doping driven Mott transition in a one-band Hubbard model within the framework of single-site dynamical mean field theory. At small dopings and large interaction…
In the context of the dynamical mean field theory of the Hubbard model, we study the compressibility near the density driven Mott transition at finite temperatures. We demonstrate this divergence using dynamical mean field theory and…
A detailed study of electronic phase transitions in the ionic Hubbard model at half filling is presented. Within the dynamical mean field approximation a series of transitions from the band insulator via a metallic state to a Mott-Hubbard…
Describing the doped Fullerenes using a generalized Hubbard model, we study the Mott transition for different integer fillings of the t_1u band. We use the opening of the energy-gap E_g as a criterion for the transition. E_g is calculated…
The manipulation of electronic structure through periodic electric fields enables the reversible control of effective interactions in extended antiferromagnetic Mott insulators on ultrafast timescales. A careful analytical examination of…