Related papers: Size Dependent Sensitivity of Raman Line-Shape Par…
Strong radial confinement in semiconductor nanowires leads to modified electronic and phononic energy spectra. We analyze the current response to the interplay between quantum confinement effects of the electron and phonon systems in a…
The range of stimulated Raman scattering (SRS) frequencies covers a domain which at the low end abuts half the laser frequency, omega_0 / 2, according to the simplest SRS theories, corresponding to scatter from electron densities near 1/4…
The on-surface synthesis of graphene nanoribbons (GNRs) allows for the fabrication of atomically precise narrow GNRs. Despite their exceptional properties which can be tuned by ribbon width and edge structure, significant challenges remain…
High-gain resonant nonlinear Raman scattering on trapped cold atoms within a high-fineness ring optical cavity is simply explained under a nonlinear opto-mechanical mechanism, and a proposal using it to detect frequency of micro-trap on…
We report high pressure Raman experiments of Black phosphorus up to 24 GPa. The line widths of first order Raman modes A$^1_g$, B$_{2g}$ and A$^2_g$ of the orthorhombic phase show a minimum at 1.1 GPa. Our first-principles density…
Lead sulfide is an important semiconductor that has found technological applications for over a century. Raman spectroscopy, a standard tool for the investigation and characterization of semiconductors, has limited application to this…
We report interesting anomalies in the temperature dependent Raman spectra of FeSe$_{0.82}$ measured from 3K to 300K in the spectral range from 60 to 1800 cm$^{-1}$ and determine their origin using complementary first-principles density…
Raman transitions have a wide range of applications in atomic physics and have recently been proposed as a means for improving high-precision high-voltage measurements. Here, we present a theoretical analysis and a first experimental…
Implementing stimulated Raman scattering in a low-loss microresonator could lead to Raman lasing. Here, we report the demonstration of an efficient Raman laser with $>50 \%$ power efficiency in an integrated silicon carbide platform for the…
Guided-wave atom interferometers measure interference effects using atoms held in a confining potential. In one common implementation, the confinement is primarily two-dimensional, and the atoms move along the nearly free dimension under…
Pressure-dependent, low temperature inelastic light (Raman) scattering measurements of KCuF$_3$ show that applied pressure above $P^{*} \sim$ 7 kbar suppresses a previously observed structural phase transition temperature to zero…
Those who measure success with culmination do not seem to be aware that life is a journey not a destination. This spirit is best reflected in the unceasing failures in efforts for solving the problem of controlled thermonuclear fusion for…
Differently distorted areas on a polycarbonate sample are studied by means of Raman spectroscopy. The various Raman lines, whose energy shifts range between 200 and 3200 cm-1, are compared for different sample positions with respect to…
The Raman selection rules arise from the crystal symmetry and then determine the Raman activity and polarization of scattered phonon modes. However, these selection rules can be broken in resonant process due to the strong electron-phonon…
Polymer particle size constitutes a crucial characteristic of product quality in polymerization. Raman spectroscopy is an established and reliable process analytical technology for in-line concentration monitoring. Recent approaches and…
We present a Raman study of ZrAs_{2} single crystals, a nodal line semimetal with symmetry-enforced Dirac-like band crossings. We identified the symmetry of phonon modes by polarized light measurements and comparison with calculated phonon…
The behavior of a system of two-dimensional elongated particles (discorectangles) packed into a slit between two parallel walls was analyzed using a simulation approach. The packings were produced using the random sequential adsorption…
The polarized Raman spectra of stoichiometric LaTiO$_3$ (T$_N = 150$ K) were measured between 6 and 300 K. In contrast to earlier report on half-metallic LaTiO$_{3.02}$, neither strong background scattering, nor Fano shape of the Raman…
The temperature and magnetic field dependence of lattice and carrier excitations in MnSi is studied in detail using inelastic light scattering. The pure symmetry components of the electronic response are derived from the polarization…
Raman spectroscopic study of amorphous carbon layers for two different excitation wavelengths at room temperature. The amount of sp3 bondings is estimated to about 10% for both samples, evaluated from the ratio of the D- and G-Raman line…