Related papers: Spatiotemporal electronic spin fluctuations in ran…
The spin dynamics of localized electrons in bulk semiconductors is governed by the interplay of effective nuclear field fluctuations, spin exchange between electrons, and spin transitions into the conduction band. Using spin noise…
The nuclear spin systems in CdTe/(Cd,Zn)Te and CdTe/(Cd,Mg)Te quantum wells (QW) are studied using a multistage technique combining optical pumping and Hanle effect-based detection. The samples demonstrate drastically different nuclear spin…
We have investigated spin relaxation times in CdTe quantum dots doped with a single Mn atom, a prototype of a system where the interaction between a single charge carrier and a single spin takes place. A theoretical model that was used…
Nuclear spin coherence and relaxation dynamics of all constituent isotopes of an n-doped CdTe/(Cd,Mg)Te quantum well structure are studied employing optically detected nuclear magnetic resonance. Using time-resolved pump-probe Faraday…
We used time-resolved Kerr rotation technique to study the electron spin coherence in a comprehensive set of bulk CdTe samples with various concentrations of electrons that were supplied by n-type doping. The electron spin coherence time of…
The spin fluctuations of electron and hole doped self-assembled quantum dot ensembles are measured optically in the low-intensity limit of a probe laser in absence and presence of longitudinal or transverse static magnetic fields. The…
We present spin noise (SN) measurements on an ensemble of donor-bound electrons in ultrapure GaAs:Si covering temporal dynamics over six orders of magnitude from milliseconds to nanoseconds. The SN spectra detected at the donor-bound…
We combine extensive precision measurements of the optically detected spin dynamics and magneto-transport measurements in a contiguous set of n-doped bulk GaAs structures in order to unambiguously unravel the intriguing but complex…
The magnetic interactions between the spin of an unpaired electron and the surrounding nuclear spins can be exploited to gain structural information, to reduce nuclear relaxation times as well as to create nuclear hyperpolarization via…
We discuss the implications of a small indium content (3%) in a GaAs epilayer on the electron- and nuclear-spin relaxation due to enhanced quadrupolar effects induced by the strain. Using the weakly perturbative spin-noise spectroscopy, we…
We propose a model for spectral diffusion of localized spins in semiconductors due to the dipolar fluctuations of lattice nuclear spins. Each nuclear spin flip-flop is assumed to be independent, the rate for this process being calculated by…
We present experimental data and associated theory for correlations in a series of experiments involving repeated Landau-Zener sweeps through the crossing point of a singlet state and a spin aligned triplet state in a GaAs double quantum…
The theory of spin fluctuations is developed for an ensemble of localized electrons taking into account both hyperfine interaction of electron and nuclear spins and electron hopping between the sites. The analytical expression for the spin…
Nuclear spin relaxation is studied in n-GaAs thick layers and microcavity samples with different electron densities. We reveal that both in metallic samples where electrons are free and mobile, and in insulating samples, where electrons are…
The mechanisms that determine spin relaxation times of localized electrons in impurity bands of n-type semiconductors are considered theoretically and compared with available experimental data. The relaxation time of the non-equilibrium…
A quasi-classical theoretical description of polarization and relaxation of nuclear spins in a quantum dot with one resident electron is developed for arbitrary mechanisms of electron spin polarization. The dependence of the…
The evolution of the electron spin dynamics as consequence of carrier delocalization in $n$-type GaAs is investigated by the recently developed extended pump-probe Kerr/Faraday rotation spectroscopy. We find that isolated electrons…
We use time-resolved detection of the Hanle effect and polarized photoluminescence with dark intervals to investigate the buildup and decay of the spin polarization of nuclei interacting with donor-bound electrons in $n$-doped GaAs. Strong…
We measure the donor-bound electron longitudinal spin-relaxation time ($T_1$) as a function of magnetic field ($B$) in three high-purity direct-bandgap semiconductors: GaAs, InP, and CdTe, observing a maximum $T_1$ of $1.4~\text{ms}$,…
The hyperfine field from dynamically polarized nuclei in n-GaAs is very spatially inhomogeneous, as the nu- clear polarization process is most efficient near the randomly-distributed donors. Electrons with polarized spins traversing the…