Related papers: In-situ characterization of ultrathin nickel silic…
Revealing the momentum-resolved electronic structure of infinite-layer nickelates is essential for understanding this new class of unconventional superconductors, but has been hindered by the formidable challenges in improving the sample…
This work reports on temperature-induced out-diffusion and concentration decay of the prominent intrinsic point defect VNi (nickel vacancy) in the wide-gap p-type semiconductor nickel oxide (NiO). VNi can easily be introduced into NiO thin…
In ultrafast electron diffraction (UED) experiments, accurate retrieval of time-resolved structural parameters, such as atomic coordinates and thermal displacement parameters, requires an accurate scattering model. Unfortunately,…
Irradiation of cuprate high-$T_c$ superconductors with light ions of moderate energy creates point defects that lead to a reduction or full suppression of the critical temperature. By shaping the ion flux with a stencil mask, nanostructures…
Vanadium silicide, V$_3$Si, is a promising superconductor for silicon-based superconducting (SC) devices due to its compatibility with silicon substrates and its potential for integration into existing semiconductor technologies. However,…
Superconducting and normal state properties of sputtered Niobium nanofilms have been systematically investigated, as a function of film thickness in a d=9-90 nm range, on different substrates. The width of the superconducting-to-normal…
Computationally guided high-throughput synthesis is used to explore the Zn-V-N phase space, resulting in the synthesis of a novel ternary nitride Zn$_2$VN$_3$. Following a combinatorial PVD screening, we isolate the phase and synthesize…
Characterizing the dimensionality of the superconducting state in infinite-layer (IL) nickelates is essential for understanding its nature. Most studies have addressed this by examining the anisotropy of the upper critical fields. However,…
Disorder induced phase slip (PS) events appearing in the current voltage characteristics (IVCs) are reported for two-dimensional TiN thin films produced by a robust substrate mediated nitridation technique. Here, high temperature annealing…
We present results from the SPring-8 Angstrom Compact free electron LAser (SACLA) XFEL facility, using a high intensity ($\sim\!10^{20}\,$W/cm$^2$) X-ray pump X-ray probe scheme to observe changes in the ionic structure of silicon induced…
This study aims towards a systematic reciprocity of the tunable synthesis parameters - partial pressure of N$_2$ gas, ion energy (\Ei) and Ti interface in TiN thin film samples deposited using ion beam sputtering at ambient temperature…
This paper reports the synthesis and detailed characterization of graphite thin films produced by thermal decomposition of the (0001) face of a 6H-SiC wafer, demonstrating the successful growth of single crystalline films down to…
We have investigated the temperature driven first order metal-insulator (M-I) transition in thin films of NdNiO$_3$ and have compared it with the bulk behavior. The M-I transition of thin films is sensitive to epitaxial strain and a partial…
The nucleation mechanisms during solution deposition of organic semiconductor thin films determine the grain morphology and may influence the crystalline packing in some cases. Here, in-situ optical spectromicroscopy in reflection mode is…
The Hydrogenated Diamond Like Carbon (HDLC) thin films are deposited on Silicon substrate at room temperature using asymmetric capacitively coupled RF plasma with varying flow rates of methane. These films are undergone annealing at high…
Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between…
Originally developed technique based on generation of plasma-cluster flux emitted from cathode spots at surface of an integrally cold cathode has been applied for deposition of niobium superconductive (thick) film materials. Possibility for…
Topological defects such as dislocations and disclinations are predicted to determine the twodimensional (2-D) melting transition. In 2-D superconducting vortex lattices, macroscopic measurements evidence melting close to the transition to…
Ultrashort pulsed laser annealing is an efficient technique for crystallizing amorphous semiconductors with the possibility to obtain polycrystalline films at low temperatures, below the melting point, through non-thermal processes. Here, a…
A Li-Al-O thin film materials library, deposited by inert magnetron sputtering and post-deposition annealing in O2 atmosphere, was used to study the effects of different annealing temperatures (300 to 850{\deg}C) and durations (1 min to 7…