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The absence of both the inversion symmetry and out-of-plane mirror symmetry together with spin-orbit coupling (SOC) can induce novel electronic and piezoelectric properties. In this work, the piezoelectric properties along with carrier…

Materials Science · Physics 2020-02-26 San-Dong Guo , Xiao-Shu Guo , Zhao-Yang Liu , Ying-Ni Quan

Biaxial strain effects on electronic structures and thermoelectric properties of monolayer $\mathrm{PtTe_2}$ are investigated by using generalized gradient approximation (GGA) plus spin-orbit coupling (SOC) for the electron part and GGA for…

Materials Science · Physics 2017-04-26 San-Dong Guo

Strain engineering is a very effective method to tune electronic, optical, topological and thermoelectric properties of materials. In this work, we systematically study biaxial strain dependence of electronic structures and thermoelectric…

Materials Science · Physics 2016-07-19 San-Dong Guo , Lun Zhang

Due to their great potential in electronics, optoelectronics and piezoelectronics, Janus transition metal dichalcogenide (TMD) monolayers have attracted increasing research interest, the MoSSe of which with sandwiched S-Mo-Se structure has…

Materials Science · Physics 2020-01-08 San-Dong Guo , Xiao-Shu Guo , Ye Deng

Experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020)}) is a piezoelectric semiconductor. Here, we systematically study the large biaxial (isotropic) strain effects (0.90 to 1.10) on…

Materials Science · Physics 2021-01-15 Xiao-Shu Guo , San-Dong Guo

First principles density functional theory based calculations have been performed to investigate the strain and temperature induced tunability of the thermoelectric properties of monolayer (ML) MoS$_2$. Modifications in the electronic and…

Materials Science · Physics 2023-08-02 Saumen Chaudhuri , Amrita Bhattacharya , A. K. Das , G. P. Das , B. N. Dev

Recently fabricated two dimensional (2D) phosphorene crystal structures have demonstrated great potential in applications of electronics. Mechanical strain was demonstrated to be able to significantly modify the electronic properties of…

Materials Science · Physics 2014-07-02 Qun Wei , Xihong Peng

Two-dimensional transition metal dichalcogenides show great potential as promising thermoelectric materials due to their lower dimensionality, the unique density of states and quantum confinement of carriers. The effect of mechanical strain…

Computational Physics · Physics 2019-05-28 Jayanta Bera , Satyajit Sahu

Monolayer molybdenum disulfide ($\mathrm{MoS_2}$) under strain has many interesting properties and possible applications in technology. A recent experimental study examined the effect of strain on the bandgap of monolayer $\mathrm{MoS_2}$…

Materials Science · Physics 2024-11-18 Raj K. Sah , Hong Tang , Chandra Shahi , Adrienn Ruzsinszky , John P. Perdew

Recent studies indicated the interesting metal-to-semiconductor transition when layered bulk GeP3 and SnP3 are restricted to the monolayer or bilayer, and SnP3 monolayer has been predicted to possess high carrier mobility and promising…

Computational Physics · Physics 2020-05-20 Shasha Wei , Cong Wang , Guoying Gao

Various two-dimensional (2D) materials with graphene-like buckled structure emerge, and the $\beta$-phase AsP monolayer has been recently proposed to be thermodynamically stable from first-principles calculations. The studies of thermal…

Materials Science · Physics 2018-07-04 San-Dong Guo

We use the modified Becke-Johnson exchange potential (mBJ) with the spin-orbit coupling effect (SOC) to study effects of biaxial strain and local constant potential on electronic structure of monolayer SnSe. Our results show the fundamental…

Materials Science · Physics 2020-02-20 Feng Sun , Ting Luo , Lin Li , Aijun Hong , Cailei Yuan , Wei Zhang

In this work, the electrical properties of monolayer InSb in the presence of biaxial strain using density functional theory are investigated. Here, we first explore the band structure of InSb with and without spin-orbit coupling (SOC)…

Mesoscale and Nanoscale Physics · Physics 2020-08-20 Shoeib Babaee Touski

We present an ab-initio investigation of effects of shear strain on band structure and electronic properties of 2D phosphorene. We carried out DFT calculations to determine the shear stress as a function of shear strain and found the…

Materials Science · Physics 2015-12-18 Yashasvi Singh Ranawat , Rishabh Jain

Using the first-principles calculations based on density functional theory, we systematically investigate the strain-engineering (tensile and compressive strain) electronic, mechanical and transport properties of monolayer penta-SiC$_2$. By…

Materials Science · Physics 2017-01-16 Yuanfeng Xu , Zeyu Ning , Hao Zhang , Gang Ni , Hezhu Shao , Bo Peng , Xiangchao Zhang , Xiaoying He , Yongyuan Zhu , Heyuan Zhu

Motived by experimentally synthesized $\mathrm{MoSi_2N_4}$ (\textcolor[rgb]{0.00,0.00,1.00}{Science 369, 670-674 (2020})), the intrinsic piezoelectricity in monolayer $\mathrm{XSi_2N_4}$ (X=Ti, Zr, Hf, Cr, Mo and W) are studied by density…

Materials Science · Physics 2021-01-01 San-Dong Guo , Yu-Tong Zhu , Wen-Qi Mu

The demand of fast and power efficient spintronics devices with flexibility requires additional energy for magnetization manipulation. Stress/and strain have shown their potentials for tuning magnetic properties to the desired level. Here,…

Materials Science · Physics 2020-01-29 Esita Pandey , Braj Bhusan Singh , Purbasha Sharangi , Subhankar Bedanta

In this investigation, we conducted density functional theory simulations to explore the mechanical responses of single-layer GeP, GeAs, SiP and SiAs. In particular, we explored the possibility of band-gap engineering in these 2D structures…

Computational Physics · Physics 2018-06-19 Bohayra Mortazavi , Timon Rabczuk

Graphite-like carbon nitride (g-$\mathrm{C_3N_4}$) is considered as a promising candidate for energy materials. In this work, the biaxial strain (-4\%-4\%) effects on piezoelectric properties of g-$\mathrm{C_3N_4}$ monolayer are studied by…

Materials Science · Physics 2021-02-03 San-Dong Guo , Wen-Qi Mu , Yu-Tong Zhu

The septuple-atomic-layer $\mathrm{VSi_2P_4}$ with the same structure of experimentally synthesized $\mathrm{MoSi_2N_4}$ is predicted to be a spin-gapless semiconductor (SGS). In this work, the biaxial strain is applied to tune electronic…

Materials Science · Physics 2021-02-03 San-Dong Guo , Wen-Qi Mu , Yu-Tong Zhu , Xing-Qiu Chen
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